Journal ArticleDOI
Detectivity limits for diffused junction PbSnTe detectors
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TLDR
In this paper, the authors derived the resistance area product (R 0 A ) of diffused junction PbSnTe photo-voltaic detectors under conditions of zero bias voltage for linearly graded and one-sided abrupt junction.About:
This article is published in Infrared Physics.The article was published on 1975-11-01. It has received 41 citations till now. The article focuses on the topics: Depletion region & Diffusion current.read more
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Intrinsic infrared detectors
Antoni Rogalski,Jozef Piotrowski +1 more
TL;DR: In this article, the authors classified infrared detectors into three categories: 1.1. General classification of infrared detectors 2.2. Photoconductive detectors, 2.3.3, and 2.4.
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Analysis of the R0A product in n+-p Hg1−xCdxTe photodiodes
TL;DR: In this paper, the influence of different junction current components (diffusion current for radiative and Auger 7 recombination mechanisms, tunneling and depletion layer currents) on the R 0 A product of n + - p -Hg 1− x Cd x Te photodiodes is considered.
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Tunnel current limitations of narrow bandgap infrared charge coupled devices
TL;DR: In this paper, the authors calculated the tunnel current densities for InSb, Cd x Te and Pb 1− x Sn x Te devices which have been pulsed into deep depletion.
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Tunnel contribution to Hg1−xCdxTe and Pb1−xSnxTe p−n junction diode characteristics
TL;DR: In this article, the authors investigated the tunnel contribution to p − n junction diode electrical characteristics and showed that the soft reverse breakdown characteristic of p - n junctions in both Hg 1− x Cd x Te (HCT) and Pb 1 − x Sn x Te(LTT) is satisfactorily accounted for by the tunnel mechanism.
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Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics
TL;DR: In this article, the authors show that the current due to generation and recombination of carriers from generation-recombination centers in the space charge region of a p-n junction accounts for the observed characteristics.