Patent
Direct temperature sensing of a semiconductor device semiconductor device
Mehmet Aslan,Sumer Can +1 more
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TLDR
In this article, a temperature sensor is placed directly on the substrate containing the device whose temperature is of interest, and the circuitry used to process the sensor signals is on a separate substrate.Abstract:
An apparatus and method for directly measuring the operating temperature of a semiconductor device. A temperature sensor is placed directly on the substrate containing the device whose temperature is of interest. The circuitry used to process the sensor signals is on a separate substrate. Because the sensor is on the same substrate as the device of interest, noise is produced in the sensor signals as a result of electrons injected into the substrate by the device. The present invention includes methods for cancelling the noise and error in the temperature measurements to provide a very accurate determination of the device's operating temperature.read more
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Microcontroller Programmable System on a Chip
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Patent
Multiple sequential excitation temperature sensing method and apparatus
Jonathan M. Audy,Barrie Gilbert +1 more
TL;DR: In this paper, the temperature at a semiconductor device having a generally nonlinear, temperature dependent relationship between a pair of device parameters is determined by applying a plurality of sequential excitations to the device at different excitation levels, sensing the levels of the device parameters that correspond to the sequential excitation, and determining the device temperature from the sequential device parameter levels.
Patent
Overheating detection circuit for detecting overheating of a power device
TL;DR: In this article, the authors propose an approach for detecting overheating of a power integrated circuit using a power device integrated in a semiconductor substrate and an overheating detection circuit, which includes a reverse biased pn junction and a voltage converter.
Patent
Method of measuring junction temperature
TL;DR: In this paper, a method of measuring junction temperature of a diode junction within a semiconductor device was proposed, which has the steps of measuring current/voltage characteristics for various diode at room temperature, determining an ideal factor for each diode, changing the temperature of the diodes to a selected temperature, remeasuring current/voltage characteristics, and comparing the measurements that have been made so as to obtain a temperature coefficients.
Patent
Process for forming a semiconductor structure with closely coupled substrate temperature sense element
TL;DR: In this paper, a PN junction is formed in a poly layer to improve the thermal response to temperature changes in the substrate while still being electrically isolated from the substrate, and an overvoltage protection element is coupled to the junction to avoid rupture of the underlying thin dielectric.
Patent
Integrated-circuited temperature sensor
Sakae Kikuchi,栄 菊地 +1 more
TL;DR: In this article, a measuring circuit of a MOS transistor and a sensor of a parasitic bipolar transistor or parasitic p-n junction diode formed from the element structure of a mOS transistor are presented.