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Drawing method using charged particle beam

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TLDR
In this paper, a line width correction volume (loading correction volume) was obtained through a conversion formula of the ratio of a pattern area rate to the line width correcting volume previously obtained on the basis of the calculated area of the pattern, and a relation between the correction volume and the correcting time for the shot time of the electron beam has been previously obtained.
Abstract
PROBLEM TO BE SOLVED: To realize a drawing method which uses a charged particle beam and is capable of making a correction for a proximity effect and furthermore coping with a micronization of a pattern to draw SOLUTION: A correcting time for a shot time of the electron beam is obtained on a line width correction volume (loading correction volume) obtained through a conversion formula of the ratio of a pattern area rate to the line width correction volume previously obtained on the basis of the calculated area of the pattern Moreover, a relation between the line width correction volume and the correcting time for the shot time of the electron beam has be previously obtained The obtained correction time is obtained for each unit by an operation and pseudo-pattern data large enough to give an enough amount of accumulated scattering electrons for correcting a change of the line width caused by a loading effect are formed The pseudo-pattern data are added to actual pattern data, and the pseudo-pattern is also used for calculating a correction for a proximity effect, and in fact, a specific command is annexed to the pseudo-pattern data so as not to be shot COPYRIGHT: (C)2004,JPO

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Patent

Electron beam writing method and lithography mask manufacturing method

TL;DR: In this paper, a writing pattern to be a correcting object is divided by a rough mesh for a foggy effect correction and a fine mesh for proximity effect correction, a rate of an area occupied by the pattern for each of the meshes is obtained, a stored energy based on a Foggy effect and a proximity effect in execution of exposure in a state in which a correction for a calculating object mesh is not carried out at all is calculated, an dose in the fine mesh, and the recalculation is repeated until desirable precision in a dimension is reached.
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