Patent
Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same
TLDR
In this paper, a dual-gate Schottky barrier gate field effect transistor is provided with an intermediate electrode between a first and a second gate electrode, which forms an ohmic contact with a semiconductor substrate of the transistor.Abstract:
A dual-gate Schottky barrier gate field effect transistor is provided with an intermediate electrode between a first and a second gate electrode. This intermediate electrode forms an ohmic contact with a semiconductor substrate of the transistor. The transistor is produced by etching a first film formed on a planar surface of the substrate by the use of a pair of mask pieces to leave a pair of gate electrodes narrower than the mask pieces and projecting a metal capable of forming an ohmic contact with the semiconductor towards the planar surface perpendicularly thereof. The projected metal provides source and drain electrode on both sides of the gate electrode pair and an intermediate electrode between the gate electrodes. The intermediate electrode may be left floating during operation.read more
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Patent
Double gate trench transistor
James W. Adkisson,Paul D. Agnello,Arne W. Ballantine,Rama Divakaruni,Erin C. Jones,Jed H. Rankin +5 more
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Patent
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Patent
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Patent
Static induction transistor and its applied devices
TL;DR: In this paper, a static induction transistor is split into two separate gates facing each other to cooperatively define therebetween a channel or channels of this transistor, and the non-driving gate may be held at a certain potential or floated.
Patent
Method of fabricating self-aligned field-effect transistor having t-shaped gate electrode, sub-micron gate length and variable drain to gate spacing
TL;DR: In this paper, a multi-layer gate structure is formed on an active region formed in a semiconductor substrate, and a first aluminum layer of the gate structure, adjacent to the active region, is selectively etched to form a T-shaped gate electrode.