Patent
Dynamic sense-refresh detector amplifier
David Beecham,Howard C. Kirsch +1 more
TLDR
In this article, a dynamic sense-refresh detector amplifier consisting of a cross coupled MOS transistor pair and two sets of loadrefresh circuits which each include a capacitor and three MOS transistors is used to eliminate the negative effect of threshold voltage losses on noise margin.Abstract:
A dynamic sense-refresh detector amplifier consists essentially of a cross coupled MOS transistor pair and two sets of load-refresh circuits which each include a capacitor and three MOS transistors. The load-refresh circuits eliminate the negative effect of threshold voltage losses on noise margin by allowing the memory cell from which information is read out and sensed to be refreshed to full 1 and 0 levels. A control terminal of a transistor of each load-refresh circuit is coupled to the transistor of cross coupled pair not associated with that load-refresh circuit. In addition, a voltage clamping transistor is used with each load device to further increase operating noise margins. The dynamic operation of the amplifier allows for relatively low power dissipation.read more
Citations
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Semiconductor memory device.
TL;DR: In this paper, the read circuit senses a change in a voltage of the bitline of a bitline, and applies a voltage which is different from the first voltage to the gate of the first transistor when it senses a voltage change.
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TL;DR: A DRAM is operated based upon an external clock input, a column enable, and a row enable to access and row and column addresses are latched into buffers based upon the clock input.
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Dual stage sense amplifier for dynamic random access memory
TL;DR: In this article, an additional sense amplifier (100) on each column of a dynamic random access memory (RAM) was introduced to improve the transfer of logic information from a selected memory cell (M) to the input/output line associated therewith.
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Systems and methods for producing oil and/or gas
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References
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Patent
Stored charge memory detection circuit
TL;DR: In this article, the bucket brigade sense amplifiers are used to charge the bit line capacitances of the bit lines of a memory cell to approximately half the voltage to which the selected cell capacitance can be charged.
Patent
Differential amplifier for sensing small signals
TL;DR: In this paper, a differential amplifier providing high gain and capable of handling small signals has a common constant current source to which two parallel branches or circuits are connected, each of the branches includes a controlled current source and an input dependent current source, such as a field effect transistor, with a capacitor connected to the common point between the controlled source and the input dependent source for providing an alternating current signal to a feedback circuit of the amplifier for latch operation.
Patent
Regeneration of dynamic monolithic memories
TL;DR: In this article, an isolation transistor between the bit decoder and memory cell was proposed to reduce power requirements and noise, improving stability of the sense latch and increasing the speed of operation of the memory.
Patent
Dynamic sense-refresh detector amplifier
TL;DR: In this paper, a dynamic sense-refresh detector amplifier consists of a cross coupled MOS transistor pair and two sets of load-resh circuits which each include a capacitor and three MOS transistors.
Patent
High accuracy MOS comparator
TL;DR: In this paper, a capacitive coupling is used for enabling the amplifiers to be independently biased and to eliminate D.C. offsets, and the comparator is set up for operation in the comparison period during which the input signals are compared.
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