Patent
Field effect semiconductor device having an unsaturated triode vacuum tube characteristi
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TLDR
The drain-current to drain-voltage characteristic simulates the anode-to-anode voltage characteristic of the triode vacuum tube very closely as mentioned in this paper, and the drain current will not flow where the drain voltage is below a certain threshold voltage, and will flow when the drain volage is above the threshold voltage exhibiting a linear resistance characteristic.Abstract:
A field effect transistor comprises a semiconductor channel, a source and a drain electrode formed at the opposite ends of the channel and a gate electrode provided on the side of the channel. The channel has a small impurity density and therefore the depletion layer extending from the gate goes deep into the channel to substantially close the conductive portion of the channel even in the absence of a gate voltage. The drain current will not flow where the drain voltage is below a certain threshold voltage, and will flow where the drain volage is above the threshold voltage exhibiting a linear resistance characteristic. This drain-current to drain-voltage characteristic simulates the anode-current to anode-voltage characteristic of the triode vacuum tube very closely.read more
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References
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Patent
Field-effect transistor
TL;DR: A field effect transistor is a semiconductor body having a channel region of a first type of conductivity, a control region of the second type, and an intermediate region between the channel and control regions and being less doped than the channel region as mentioned in this paper.
Patent
Method for making passivated field-effect transistor
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Gunn-type solid-state devices
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