T
Tatsuya Kunikiyo
Researcher at Renesas Electronics
Publications - 88
Citations - 1530
Tatsuya Kunikiyo is an academic researcher from Renesas Electronics. The author has contributed to research in topics: Semiconductor device & Layer (electronics). The author has an hindex of 22, co-authored 88 publications receiving 1516 citations. Previous affiliations of Tatsuya Kunikiyo include Mitsubishi Electric & Panasonic.
Papers
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Journal ArticleDOI
A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact‐ionization model
Tatsuya Kunikiyo,M. Takenaka,Yoshinari Kamakura,Mitsuru Yamaji,H. Mizuno,Masato Morifuji,Kenji Taniguchi,Chihiro Hamaguchi +7 more
TL;DR: In this article, the physics of electron transport in bulk silicon is investigated by using a newly developed Monte Carlo simulator which improves the state-of-the-art treatment of hot carrier transport.
Patent
Semiconductor device and SOI substrate
TL;DR: In this article, the authors proposed a gate-insulating film which can be formed thinner than a silicon oxide film and which is less susceptible to deterioration, and a gate electrode composed of a three-layer film including a doped polysilicon film, a barrier metal layer and a metal film of tungsten.
Journal ArticleDOI
Impact ionization model for full band Monte Carlo simulation
Yoshinari Kamakura,H. Mizuno,Mitsuru Yamaji,Masato Morifuji,K. Taniguchi,Chihiro Hamaguchi,Tatsuya Kunikiyo,M. Takenaka +7 more
TL;DR: In this paper, the impact ionization rate in silicon is numerically derived from wave functions and energy band structure based on an empirical pseudopotential method, which is well fitted to an analytical formula with a power exponent of 4.6.
Patent
Magnetic memory device and magnetic substrate
TL;DR: In this article, a plurality of word lines (WL1) are provided in parallel to one another and plurality of bit lines (BL1), intersecting the word lines, are formed at intersections of the word line and the bit lines there between.
Journal ArticleDOI
A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon
Antonio Abramo,L. Baudry,Rossella Brunetti,R. Castagné,M. Charef,F. Dessenne,Philippe Dollfus,Robert W. Dutton,W.L. Engl,R. Fauquembergue,C. Fiegna,Massimo V. Fischetti,S. Galdin,Neil Goldsman,M. Hackel,Chihiro Hamaguchi,Karl Hess,K. Hennacy,P. Hesto,J.M. Higman,Takahiro Iizuka,Christoph Jungemann,Yoshinari Kamakura,Hans Kosina,Tatsuya Kunikiyo,Steven E. Laux,Hongchin Lin,C. Maziar,H. Mizuno,H.J. Peifer,S. Ramaswamy,Nobuyuki Sano,P.G. Scrobohaci,Siegfried Selberherr,M. Takenaka,Ting-Wei Tang,Kenji Taniguchi,J. L. Thobel,R. Thoma,K. Tomizawa,Masaaki Tomizawa,T. Vogelsang,Shiuh-Luen Wang,Xiaolin Wang,Chiang-Sheng Yao,P. D. Yoder,Akira Yoshii +46 more
TL;DR: Although the computed data vary widely, depending on the models and input parameters which are used, they provide for the first time a quantitative (though not comprehensive) comparison of Boltzmann Equation solutions.