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Patent

Flip-flop circuit

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TLDR
The flip-flop circuit as discussed by the authors is a series circuit with a negative differential resistance element (NDR) and another NDR element that has a control terminal capable of controlling a value of an element's current.
Abstract
The flip-flop circuit includes: a series (8) circuit which has a negative differential resistance element (1) and another negative differential resistance element (2) that has a control terminal capable of controlling a value of an element current; a transfer gate (9); a latch circuit (10) which has negative differential resistance elements (4), (5) connected in series; and an inverter circuit (11) which has an FET (6) as a drive element and a negative differential resistance element (7) as a load element. With this, such a flip-flop can be obtained that when a clock signal (CLK) is applied to a power supply terminal DD1 of the series circuit (8) and a control terminal of the transfer gate (9) and an input signal (IN) is supplied to the control terminal of the negative differential resistance element (2), an output is placed at a terminal.

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Citations
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Patent

Negative differential resistance field effect transistor (ndr-fet) & circuits using the same

King Tsu-Jae
TL;DR: In this paper, an improved negative differential resistance field effect transistor (NDR-FET) is proposed. But the NDR-fET is not suitable for memory cells, since it requires a single channel technology (i.e., instead of CMOS) and yet provides low power.
Patent

Driver circuit, display device, and electronic device

TL;DR: In this paper, a shift register with a plurality of flip-flop circuits is described. But the flip-FLOP circuit is not considered in this paper, and the potential of a node A is set, so that A is prevented from entering a floating state.
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Memory cell using negative differential resistance field effect transistors

Tsu-Jae King
TL;DR: In this article, a memory cell using both negative differential resistance (NDR) and conventional FETs was proposed, which can be implemented with fewer active devices by exploiting an NDR characteristic.
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Charge pump for negative differential resistance transistor

King Tsu-Jae
TL;DR: In this paper, an integrated circuit device includes a charge pump for providing a bias signal to a field effect transistor (FET) that is capable of operating in a negative differential resistance mode.
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Negative Differential Resistance Pull Up Element For DRAM

TL;DR: The pull-up element is an NDR FET connected between a high voltage source and a storage node of the memory cell as mentioned in this paper, which exhibits a refresh behavior that is dependent on the data value stored in the memory.
References
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Patent

High-speed flip flop circuit with master latching circuit free from influence of slave latching circuit

TL;DR: A flip flop circuit comprises a master latching circuit having a first transmission gate responsive to a clock signal and the complementary clock signal for transferring a data bit to a first positive feedback loop, and a slave latching circuits having a second transmitter and a second receiver responsive to both the clock and complementary clock signals and complementarily shifted between on and off states with respect to the first transmitter as mentioned in this paper.
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TL;DR: In this paper, a push-pull D flip-flop circuit with a master latch, a slave latch, and a pushpull circuit was proposed. But the push-Pull circuit was not suitable for the C-to-Q delay.
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TL;DR: In this article, a semiconductor element having N-type negative resistance characteristics is connected in series to obtain a series circuit and the two ends of the series circuit serve as drive voltage terminals to which periodic drive voltages are applied.
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TL;DR: In this paper, a latching comparator circuit employs latching devices having a region of negative impedance separating regions of higher and lower positive impedance, such as resonant tunnel diodes, to significantly increase operating speed.