Patent
Gallium nitride-based bismuth ferrite ferroelectric thin film and preparation method thereof
TLDR
In this paper, a gallium nitride-based bismuth ferrite ferroelectric thin film and a preparation method for its preparation has been proposed, and the results have shown that the LSMO/TiO dual buffer layers are adopted, so that the lattice mismatching degree between bismith ferrite and gallium is reduced.Abstract:
The invention relates to a gallium nitride-based bismuth ferrite ferroelectric thin film and a preparation method thereof The gallium nitride-based bismuth ferrite ferroelectric thin film comprises a TiO buffer layer, a strontium lanthanum manganate buffer layer and a bismuth ferrite ferroelectric thin film which are formed on a gallium nitride semiconductor thin film substrate in sequence through a pulse laser deposition technology The gallium nitride-based bismuth ferrite ferroelectric thin film and the preparation method thereof have the following beneficial effects: the LSMO/TiO dual buffer layers are adopted, so that the lattice mismatching degree between bismuth ferrite and gallium nitride is reduced; the epitaxial growth of the bismuth ferrite ferroelectric thin film on the gallium nitride semiconductor thin film is realized; the (111) single-oriented bismuth ferrite thin film is obtained; and the epitaxial integration of the bismuth ferrite ferroelectric thin film and the gallium nitride semiconductor is realizedread more
Citations
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References
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Patent
Epitaxial thin films
TL;DR: The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity, which allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes as mentioned in this paper.
Journal ArticleDOI
Effects of SrTiO3/TiO2 buffer layer on structural and electrical properties of BiFeO3 thin films grown on GaN (0002)
TL;DR: The epitaxial growth promoted by the SrTiO3/TiO2 buffer layer is a pivotal parameter in the improved electric properties of BFO films on GaN (0002).
Patent
Transparent epitaxial ferroelectric film capacitor and producing method thereof
Feng Chen,Wenbin Wu +1 more
TL;DR: The transparent extension ferroelectric film capacitor and its preparation method use impulse laser depositing plating film method to extension develop tetragonal lead zirconate titanate (PZT) film on transparent electric film and get a film with transparent monocrystal STO (SrTiO3 (001)) base and PZT (PbZrxTi1-xO3) film ferro electric dielectric layer as discussed by the authors.
Patent
ABO3/TiO2/MgO/III-V group nitride semiconductor heterostructure and preparation method
TL;DR: In this article, an ABO3/TiO2/MgO/III-V group nitride semiconductor heterostructure and a preparation method relating to the field of microelectronic materials are described.
Patent
Device and method for preparing bismuth ferrite film and preparation method of solar cell
TL;DR: In this paper, a device for the preparation of bismuth ferrite films with texture characteristics is described, where two identical air holes are symmetrically arranged in the side wall of the crucible body of the device, and a breather pipe is connected to the air holes.
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