Journal ArticleDOI
Heat‐Treatment of Anodic Oxide Films on Tantalum I . The Effects on Dielectric Properties
TLDR
When anodized tantalum is subjected to temperatures in excess of 200°C, the equivalent series capacitance, equivalent series resistance, and temperature, frequency, and bias dependences of these properties increase as discussed by the authors.Abstract:
When anodized tantalum is subjected to temperatures in excess of 200°C, the equivalent series capacitance, equivalent series resistance, and temperature, frequency, and bias dependences of these properties increase. These phenomena are interpreted as resulting from the extraction of oxygen from the dielectric oxide by the tantalum substrate. This process creates an oxygen‐deficient region in the oxide whose semiconductivity causes the above‐mentioned changes in dielectric properties. Reanodization of the sample removes the effects associated with the conductivity. A small increase in apparent dielectric constant, which also results from heat‐treatment, is a permanent effect.read more
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Journal ArticleDOI
Critical oxygen content in porous anodes of solid tantalum capacitors
TL;DR: X-ray diffraction analysis of sintered porous anodes of solid tantalum capacitors and the currentvoltage (I-V) characteristics of Ta2O5 amorphous layers formed on the anode surface have been performed as mentioned in this paper.
Journal ArticleDOI
Anodically formed oxide films on niobium: Microstructural and electrical properties
TL;DR: In this article, the electrical and structural properties of nanoscale niobium pentoxide (Nb2O5) dielectric layers in Niobium-based solid electrolyte capacitors were studied.
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Dissolution of anodic Ta2O5 layers into polycrystalline tantalum
J. Giber,Hans Oechsner +1 more
TL;DR: In this article, anodic Ta2O5 films of thickness 100 nm on polycrystalline tantalum were annealed in ultraligh vacuum at temperatures between 670 and 800 K and annealing times up to 120 min.
Journal ArticleDOI
Mechanism of formation and growth of sunflower-shaped imperfections in anodic oxide films on niobium
TL;DR: In this article, the authors investigated the formation and growth of imperfections in anodic oxide films and showed that the dielectric dispersion of the films became serious, showing a bias voltage dependence of the parallel equivalent capacitance.
Journal ArticleDOI
Room-temperature formation of tantalum oxide films by liquid phase deposition
TL;DR: In this paper, the growth of tantalum pentoxide (Ta 2 O 5 ) on a silicon (Si) substrate at room temperature (∼10 °C) by means of a liquid phase deposition (LPD) method was demonstrated.