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High power x-band semiconductor rf switch for pulse compression systems of future linear colliders

TLDR
In this paper, the authors describe the potential of semiconductor X-band RF switch arrays as a means of developing high power RF pulse compression systems for future linear colliders, and describe design methodology of high-power RF switches, and scaling law which governs the relation between power handling capability and number of elements.
Abstract
We describe the potential of semiconductor X-band RF switch arrays as a means of developing high power RF pulse compression systems for future linear colliders. We describe design methodology of high power RF switches, and scaling law which governs the relation between power handling capability and number of elements. The design and implementation of the active waveguide window is presented. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of low power and high power RF measurements of the active waveguide window are presented. The high power experiment is performed at power levels of several megawatts at X-band.

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Citations
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Optically controlled 30 ghz high power active rf phase switch for the ctf3 rf pulse compressor

I. Syratchev
TL;DR: In this article, an over-moded RF circuit with an active element made from a semiconductor controlled by a laser beam is proposed to make the operation of the whole 30 GHz power production complex more reliable and robust with the potential to increase the compression efficiency.

Summary of the rf-technology working group (t3)

TL;DR: The next generation linear collider will require high-power microwave sources and accelerating systems vastly more challenging than its predecessor, the Stanford Linear Collider (SLC), and cost efficiency will demand high accelerating gradient to achieve beam energies five to ten times greater than in the SLC as mentioned in this paper.
References
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Book

Microwave Semiconductor Engineering

TL;DR: White as mentioned in this paper has studied, worked, and taught in all aspects of microwave semiconductor materials, control diodes, and circuit applications, and has developed a clear, well-organized writing style that makes this book easy to use as a self-teaching text, a reference volume, and a design handbook.
ReportDOI

Zeroth-order design report for the next linear collider. Volume 2

TL;DR: The conclusion of this study is that indeed the NLC is technically feasible and can be expected to reach the performance levels required to perform research at the TeV energy scale.
Journal ArticleDOI

Active high-power RF pulse compression using optically switched resonant delay lines

TL;DR: In this paper, the authors present the design and a proof of principle experimental results of an optically controlled high-power RP pulse-compression system based on the switched resonant delay-line theory.
Journal ArticleDOI

Active radio frequency pulse compression using switched resonant delay lines

TL;DR: Wilson and Z.D.Ruth as mentioned in this paper presented a study and design methodology for enhancing the efficiency of the SLED II rf pulse-compression system, which employs resonant delay lines as a means of storing rf energy.
Journal ArticleDOI

Microwave Silicon Windows for High-Power Broad-Band Switching Applications

TL;DR: In this article, the authors presented theoretical and experimental results obtained with a novel silicon window utilizing double-carrier injection to achieve high-power broadband microwave switching, which consists of a wafer of high-resistivity silicon inserted across a waveguide with thin-line junction structures oriented orthogonal to the RF electric field.
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