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Impurities and point defects in semiconductors
V. V. Emtsev,T. V. Mashovets +1 more
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The article was published on 1981-01-01 and is currently open access. It has received 58 citations till now. The article focuses on the topics: Solid-state physics & Crystallographic defect.read more
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Doping of Semiconductors Using Radiation Defects Produced by Irradiation with Protons and Alpha Particles
TL;DR: One of the modern methods for modifying semiconductors using beams of protons and alpha particles is analyzed; this modification is accomplished by the controlled introduction of radiation defects into the semiconductor.
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Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties
TL;DR: In this article, the physical mechanisms and fundamental methods of obtaining nanometer-size atomic clusters in semiconductors are discussed, along with the possibility of controlling the properties of these clusters and those of the resulting cluster-containing materials.
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Energy levels of vacancies and interstitial atoms in the band gap of silicon
TL;DR: In this paper, the secondary processes of radiation-induced defect formation in Si crystals with charge-dependent selective traps for vacancies and interstitial atoms were identified; these level were determined previously from the effect of the irradiation conditions on the annihilation rate of elementary primary defects.
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Effect of electron irradiation on carrier removal rate in silicon and silicon carbide with 4H modification
V. V. Kozlovskiĭ,Valentin V. Emtsev,K. V. Emtsev,Nikita B. Strokan,Alexander M. Ivanov,V. N. Lomasov,Gagik A. Oganesyan,A. A. Lebedev +7 more
TL;DR: In this article, the effect of successive (up to fluences of 3 × 1016 cm−2) irradiation with 900 keV electrons of samples made of FZ-Si and 4H-SiC (CVD) has been performed for the first time.
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Positron annihilation on defects in silicon irradiated with 15 MeV protons
Nikolay Arutyunov,Mohamed Elsayed,Mohamed Elsayed,Reinhard Krause-Rehberg,Valentin V. Emtsev,Gagik A. Oganesyan,Vitalii V. Kozlovski +6 more
TL;DR: It is argued that the value of activation energy of the isochronal annealing E(a) ≈ 0.74-0.59 eV is due to dissociation of the positron traps, which is accompanied by restoration of the electrical activity of the phosphorus atoms.