G
Gagik A. Oganesyan
Researcher at Russian Academy of Sciences
Publications - 73
Citations - 406
Gagik A. Oganesyan is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Silicon & Vacancy defect. The author has an hindex of 12, co-authored 70 publications receiving 387 citations.
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Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type
Valentin V. Emtsev,Alexander M. Ivanov,Vitalii V. Kozlovski,A. A. Lebedev,Gagik A. Oganesyan,Nikita B. Strokan,G. Wagner +6 more
TL;DR: In this paper, the effects of irradiation with 0.9 MeV electrons as well as 8 and 15 MeV protons on moderately doped n-Si grown by the floating zone (FZ) technique and 4H grown by chemical vapor deposition are studied in a comparative way.
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Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures
V.V. Emtsev,C.A.J. Ammerlaan,Gagik A. Oganesyan,Boris A. Andreev,D. I. Kuritsyn,Andrzej Misiuk,Barbara Surma,Charalamos A. Londos +7 more
TL;DR: In this article, the formation kinetics of thermal double donors, a dominant family of thermal donors in Czochralski-grown silicon annealed at T < 600 °C, are studied in detail.
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Radiation-induced defects in n-type GaN and InN
Valentin V. Emtsev,V. Yu. Davydov,Eugene E. Haller,A. A. Klochikhin,V. V. Kozlovskii,Gagik A. Oganesyan,D.S. Poloskin,N. M. Shmidt,V. A. Vekshin,A. S. Usikov +9 more
TL;DR: In this article, the electrical properties of the n-GaN and n-InN, subjected to proton irradiation, are studied and the annealing behavior of the radiation-induced defects in both materials is discussed briefly.
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Low-temperature photoluminescence characterization of defects formation in hydrogen and helium implanted silicon at post-implantation annealing
A. V. Mudryi,F. P. Korshunov,A. I. Patuk,I. A. Shakin,T. P. Larionova,A.G. Ulyashin,Reinhart Job,W. R. Fahrner,Valentin V. Emtsev,V. Yu. Davydov,Gagik A. Oganesyan +10 more
TL;DR: In this article, the formation kinetics of optically active centers in H and He implanted CZ Si, annealed in the temperature range of 200-1000°C is presented.
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The effect of germanium doping on the evolution of defects in silicon
TL;DR: In this article, infrared spectroscopy measurements are taken on Ge-doped silicon samples irradiated by 2 MeV electrons to study the thermal evolution of VO defects and VO2 complexes upon annealing.