A. A. Lebedev

TL;DR: In this paper, the authors analyzed the effect of intrinsic defects in the SiC crystal lattice both on the formation of deep centers and on the properties of the epitaxial layers themselves, such as their doping level and polytype homogeneity.

TL;DR: In this article, the authors showed that irradiation of wideband gap semiconductors may lead to an increase in the concentration of uncompensated donors in an n-type material.

TL;DR: The latest results obtained in the development of high-power devices based on wide-gap semiconductors are examined in this paper, where it is shown that at present silicon carbide remains the most promising material for high-temperature, radiation-resistant, high power electronics.

TL;DR: In this paper, an optimized technology of sublimation epitaxial growth was used to obtain structurally perfect 6H-SiC layers with a concentration of uncompensated donors as low as 10(15) cm(-3).

TL;DR: In this paper, the structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectrography, angle-resolved photoemission spectrogram, and Xray absorption spectrograms at the carbon K edge.