Patent
Integration of laser with photodiode for feedback control
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TLDR
In this paper, a photodiode having the same epitaxial layers as a VCSEL is also integrally formed alongside of the vertical cavity surface emitting laser (VCSEL) for monitoring optical radiation intensities.Abstract:
Photodiodes are integrally formed with vertical cavity surface emitting lasers (VCSELs) and superluminescent light emitting diodes (SLEDs) for monitoring optical radiation intensities. In different embodiments, the photodiode is epitaxially formed within a mirror of a VCSEL, non-epitaxially formed on top of a VCSEL, non-epitaxially formed on side of a VCSEL, or formed on the substrate on the side opposite the VCSEL. A lateral injection vertical cavity surface emitting laser is also disclosed for integration with a lateral PIN photodiode. A photodiode having the same epitaxial layers as a VCSEL is also integrally formed alongside of the VCSEL. Similar devices using SLEDs are also disclosed.read more
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Patent
Polarized surface-emitting laser
Jack L. Jewell,Greg R. Olbright +1 more
TL;DR: In this article, a vertical-cavity, surface-emitting semiconductor diode laser having a monolithic and planar surface and having lateral anisotropy in order to control the polarization of the emitted beam of light is described.
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