Using the “rigid-pseudoion” model, we have calculated the electron-phonon and hole-phonon interaction matrix elements for the Γ-Δ scattering (TO,LO,TA,LA) in Ge. The results of the calculation are compared to the corresponding values in Si and GaP (LA,TA) and to the Γ-L numbers of Ge. Insights are gained into the Γ-Δ and Γ-L phonon assisted scattering.

Intervalley electron-phonon (EP) and hole-phonon(HP) interactions play an important role in many optical1–5, time-dependent optical6, and transport7–10 properties of semiconductors. However, relatively little is known about them either experimentally or theoretically. This deficiency can be traced to the difficulty in obtaining reliable experimental values for the matrix elements of these interactions. In multivalley indirect semiconductors the fundamental absorption process is phonon-assisted. This process can proceed by two mechanisms involving EP as well as HP scattering matrix elements and in such a way that they can interfere either constructively or destructively. However, the nature of this interference phenomena inhibits the evaluate of these matrix elements directly by measuring only one parameter, e.g. the absorption coefficient or luminescence. This difficulty can be overcome by the application of a uniaxial stress along appropriate crystallographic axes which reduces the symmetry of the valence and/ or conduction bands. We will discuss various piezospectroscopic experiments that have been performed on Si (Γ-Δ),3 GaP(Γ-X)1,11 and Ge (Γ-L)4. These studies, combined with previously measured values of the absorption coefficient, can be used to evaluate the EP and HP scattering matrix elements for the TO phonon in Si2 as well as the LA and TA phonons in GaP2,11.

Intervalley electron-phonon and hole-phonon scattering matrix elements in germanium

Citations

Intervalley Electron-Phonon and Hole-Phonon Interactions in Semiconductors: Experiment and Theory

References

Calculation of the Γ − Δ Electron-Phonon and Hole-Phonon Scattering Matrix Elements in Silicon

Related Papers (5)

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Relative intensities of indirect transitions: Electron-phonon and hole-phonon interaction matrix elements in Si (TO) and GaP (LA,TA)