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Light-emitting diode suitable as a pressure sensor

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TLDR
In this article, a light-emitting diode is characterized for the purpose of pressure-dependent brightness of the light radiation, which is useful for potential-free measurement of pressure forces.
Abstract
A light-emitting diode comprises III-V semiconductor material having a pn junction as its light-active zone from which luminescent radiation is emitted, the radiation having a pressure-dependent characteristic. The diode is characterized in that, for the purpose of pressure-dependent brightness of the light radiation, the composition of the light-active zone at the pn junction comprises a semiconductor material which has a composition which corresponds to a position close to the transition from a direct energy gap to an indirect energy gap and at which a change of the composition would result in a significant change in the brightness of the emission. The invention is particularly useful for potential-free measurement of pressure forces.

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References
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Tensioned semiconductor component

TL;DR: In this paper, a PN junction with a monocrystalline semiconductor body was used to improve the electrical properties of a semiconductor component by mechanical tensioning of its body.
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