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Low-temperature transport through a quantum dot: The Anderson model out of equilibrium.

TLDR
The infinite-U Anderson model is applied to non-equilibrium transport through a quantum dot containing two spin levels weakly coupled to two leads, leading to an observable peak in the differential conductance when the non-Equilibrium bias equals the Zeeman energy.
Abstract
The infinite-U Anderson model is applied to nonequilibrium transport through a quantum dot containing two spin levels weakly coupled to two leads. At low temperatures, the Kondo peak in the equilibrium density of states is split upon the application of a voltage bias. The split peaks, one at the chemical potential of each lead, are suppressed by nonequilibrium dissipation. In a magnetic field, the Kondo peaks shift away from the chemical potentials by the Zeeman energy, leading to an observable peak in the differential conductance when the nonequilibrium bias equals the Zeeman energy.

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Journal ArticleDOI

Kondo effect in a single-electron transistor

TL;DR: In this paper, the binding energy of the spin singlet has been observed in a single-electron transistor (SET) with only two electrodes and without control over the structure.
Journal ArticleDOI

Kondo Physics in a Single Electron Transistor

TL;DR: Meir et al. as mentioned in this paper reported measurements on a new generation of SETs that display all the aspects of the Kondo phenomenon: the spin singlet forms and causes an enhancement of the zero-bias conductance when the number of electrons on the artificial atom is odd but not when it is even.
Journal ArticleDOI

A tunable kondo effect in quantum dots

TL;DR: A tunable Kondo effect has been realized in small quantum dots and measurements of the temperature and magnetic field dependence of a Coulomb-blockaded dot show good agreement with predictions of both equilibrium and nonequilibrium Kondo effects.
Journal ArticleDOI

Kondo resonance in a single-molecule transistor

TL;DR: The Kondo resonance can be tuned reversibly using the gate voltage to alter the charge and spin state of the molecule and persists at temperatures up to 30 K and when the energy separation between the molecular state and the Fermi level of the metal exceeds 100 meV.
Journal ArticleDOI

Silicon quantum electronics

TL;DR: In this paper, a review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based quantum dots, and highlights the remarkable advances in Sibased quantum physics that have occurred in the past few years.
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