Patent
Manufacture of semiconductor device
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TLDR
In this paper, the authors proposed to operate accurate control on the threshold voltage of a semiconductor device and at the same time to increase pn voltage resistance in the boundary surface between the substrate and SiO2 film, by operating drying at a temperature below the boiling point of hydrofluoric acid.Abstract:
PURPOSE:To make it possible to operate accurate control on the threshold voltage of a semiconductor device and at the same time to increase pn voltage resistance in the boundary surface between the substrate and SiO2 film, by operating drying at a temperature below the boiling point of hydrofluoric acid after the surface of a semiconductor device is exposed by using hydrofluoric acid. CONSTITUTION:In the manufacturing processes of semiconductor devices, the process of exposing the substrate surface by using etching solution containing hydrofluoric acid or a water solution of hydrofluoric acid is frequently used. Subsequently, drying of the exposed substrate and its maintenance and operated at room temperature. But, since the substrate is generally exposed to a temperature above the boiling point, 19.4 deg.C, of hydrofluoric acid, its surface is activated. For this reason, drying and maintenance are operated at a temperature below the boiling point of hydrofluoric acid, 19.4 deg.C, so that no activated hydrofluoric acid is produced. By this, no variation occurs on the substrate surface, and a desired semiconductor device is obtained.read more
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