Patent
Method for manufacturing semiconductor device
Suzuki Tatsuya,Hagimoto Masaya +1 more
TLDR
In this article, a manufacturing method of a semiconductor device for stably obtaining an element structure of a shape/dimension as a design by reducing a difference of etching speeds of respective films, in a process for performing wetting processing on a face to which a plurality of the films are exposed by using buffered hydrofluoric acid.Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for stably obtaining an element structure of a shape/dimension as a design by reducing a difference of etching speeds of respective films, in a process for performing wetting processing on a face to which a plurality of the films are exposed by using a buffered hydrofluoric acid. SOLUTION: In the manufacturing method of the semiconductor device, element separation films 102 are formed on a silicon substrate 101 and silicon sacrifice oxide films 104 are grown in an element forming region. Impurities for forming a well and controlling a threshold of a transistor are implanted through the silicon sacrifice oxide films 104, and the silicon sacrifice oxide films 104 are removed by the buffered hydrofluoric acid. Ammonium fluoride in the buffered hydrofluoric acid is set to be not less than 20 wt. %, and the concentration of a hydrofluoric acid to be not less than 1 wt. %. COPYRIGHT: (C)2004,JPO&NCIPIread more
Citations
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Patent
Method for Manufacturing Semiconductor Device
TL;DR: In this article, the authors proposed a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost.
Patent
Semiconductor integrated circuit device and a method of manufacturing the same
TL;DR: In this paper, a semiconductor device including a memory cell including a first gate insulating film over the semiconductor substrate, a control gate electrode over the first gate and a memory gate over the second gate, with the first and second semiconductor regions in the substrate positioned on a gate electrode side and memory gate side, respectively, respectively.
Patent
High-performance cmos soi device on hybrid crystal-oriented substrates
Bruce B. Doris,Kathryn W. Guarini,Meikei Ieong,Shreesh Narasimha,Kern Rim,Jeffrey W. Sleight,Min Yang +6 more
TL;DR: An integrated semiconductor structure containing at least one device formed upon a first crystallographic surface that is optimal for that device, while another device was created upon a second different surface that was optimal for the other device as mentioned in this paper.
Patent
High performance stress-enhanced mosfets using si:c and sige epitaxial source/drain and method of manufacture
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Patent
RAISED STI PROCESS FOR MULTIPLE GATE OX AND SIDEWALL PROTECTION ON STRAINED Si/SGOI STRUCTURE WITH ELEVATED SOURCE/DRAIN
TL;DR: In this article, the gate dielectric is formed prior to trench isolation formation, thereby avoiding many of the problems associated with prior art processes in which the trench oxide is formed before to gate Dielectric formation.
References
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Patent
Method of making a heterojunction bipolar transistor with SIPOS
TL;DR: In this article, a wafer process flow encompasses an arbitray repeated layered structure of heteroepitaxial layers of silicon based films with process control throughout the strata of chemical potential and recombination velocity, suitable for both high performance MOS and bipolar transistors with three dimensional transistor capability.
Patent
Method of forming a transistor
TL;DR: In this article, the authors proposed a method for forming a double polysilicon self-aligned bipolar transistor using a single masking step for defining the emitter structure with a narrow emitter-base contact area and a large emitter contact area.
Patent
Surface cleaning method
Tatsumi Tooru,Aizaki Hisaaki +1 more
TL;DR: In this paper, a molecular beam crystal growing method is used to obtain the deposited film of excellent crystallizability by a method where low-speed oxygen ions are made to irradiate the surface of a substrate, and after an amorphous coexisting layer of a IV semiconductor and oxygen is formed, said layer is heated up and evaporated, and a clean surface is obtained.
Patent
Fine pattern formation of single crystal or polycrystalline si film
Naokatsu Ikegami,Jun Kanamori +1 more
TL;DR: In this paper, an etching mask comprising an oxide Si film is directly formed on the surface of single crystal or polycrystalline Si film by means of irradiating said surface with oxygen ion beams.
Patent
Method and equipment for manufacturing semiconductor device
TL;DR: In this article, the authors present a method to clean the surface of a semiconductor and to protect the surface by a method wherein the following are executed in succession and continuously: a process to remove a carbon-based contamination by applying active oxygen to the surface, a process removing oxygen and an oxide by applying oxygen and hydrogen, and a process forming a surface protective film.