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Material for forming a fine pattern and method for manufacturing a semiconductor device using the same

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TLDR
In this paper, a resist pattern, containing a material capable of generating an acid by exposure to light, is covered with a resist consisting of a crosslinkage in the presence of an acid, and a crosslinked layer is formed at the interface as a cover layer for the resist pattern.
Abstract
A resist pattern, containing a material capable of generating an acid by exposure to light, is covered with a resist containing a material capable of crosslinkage in the presence of an acid. The acid is generated in the resist pattern by application of heat or by exposure to light, and a crosslinked layer is formed at the interface as a cover layer for the resist pattern, thereby causing the resist pattern to be thickened. Thus, the hole diameter of the resist pattern can be reduced, or the isolation width of a resist pattern can be reduced.

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Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method

TL;DR: In this paper, a pattern-forming method was proposed, in which a substrate is coated with a positive resist composition of which solubility increases and decreases upon irradiation with actinic rays or radiation, so as to form a resist film.
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Pattern forming method using relacs process

TL;DR: In this article, a resist pattern is formed on a to-be-processed film and Ions are implanted in the upper surface of the resist pattern and an organic film is formed to cover the resist patterns and heated.
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Resist composition for negative tone development and pattern forming method using the same

TL;DR: In this paper, a resist composition for negative tone development is proposed, which can form a pattern having a good profile improved in the pattern undercut and moreover, can reduce the line edge roughness and enhance the in-plane uniformity of the pattern dimension.
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Method of forming patterns

TL;DR: In this paper, a method of forming patterns includes coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in negative developer upon irradiation with an actinic ray or radiation.
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Composition for Coating over a Photoresist Pattern

TL;DR: In this article, an aqueous composition for coating over a photoresist pattern was proposed, consisting of a first water soluble compound comprising at least a silicon moiety and at least one amino group, and a second compound consisting at least 1 carboxylic acid group.
References
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Pattern forming method.

TL;DR: In this paper, a very fine pattern was created by applying surface treatment for giving a hydrogen atom to the surface of a base body and applying energy rays to a desired region to etch the base body with use of a metal film formed on the non-applied region as a mask.
Patent

Pattern forming method and formation of photomask for phase shift method

TL;DR: In this paper, a line and space pattern of a positive type resist for i rays contg. is formed on a silicon substrate and the desired pattern consisting of the patterns 15a and the denatured layer are obtd.
Patent

Positive chemically amplified resist composition

TL;DR: In this paper, a positive chemically amplified resist composition is presented, comprising a compound which generates an acid upon irradiation with active light or radiant ray, and a resin having an acid-decomposable alkyl ester group represented by formula (I), and having a sodium content and a potassium content each of 30 ppb or less.
Patent

Negative-working photoresist composition

TL;DR: In this article, a negative-working chemical-amplification photoresist composition comprising an alkali-soluble resin, an acid-generating agent and a crosslinking agent is presented.
Patent

Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging

TL;DR: In this article, a mixture of monofunctional and polyfunctional silane silylating agents is used for top surface imaging by silylation of organic photoresists for use in lithographic techniques for the manufacture of microelectronic devices.
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