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Method for forming Cu In Se2 films

James H. Ermer, +1 more
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TLDR
In this paper, a method for fabricating a copper indium diselenide semiconductor film comprising use of DC magnetron sputtering apparatus to sequentially deposit a first film of copper on a substrate and a second film of indium on the copper film.
Abstract: 
A method for fabricating a copper indium diselenide semiconductor film comprising use of DC magnetron sputtering apparatus to sequentially deposit a first film of copper on a substrate and a second film of indium on the copper film. Thereafter the substrate with copper and indium films is heated in the presence of gas containing selenium at a temperature selected to cause interdiffusion of the elements and formation of a high quality copper indium diselenide film. In a preferred form, an insulating substrate is used and an electrical contact is first deposited thereon in the same DC magnetron sputtering apparatus prior to deposition of the copper and indium films.

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Manufacturing apparatus and method for large-scale production of thin-film solar cells

Dennis R. Hollars
TL;DR: In this paper, a modular vacuum roll-to-roll sputtering machine is described, which is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.
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RECRYSTALLIZATION METHOD TO SELENIZATION OF THIN-FILM Cu(In,Ga)Se2 FOR SEMICONDUCTOR DEVICE APPLICATIONS

David S. Albin, +6 more
TL;DR: In this paper, a process for fabricating slightly Cu-poor thin-films of Cux(In,Ga)Se2 on a substrate (12) for semiconductor device applications is described.
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Thin film solar cell and method of making

Gary A Pollock, +2 more
TL;DR: In this paper, a structure for thin films of Group I-III-VI compound semiconductors such as copper indium diselenide for use in heterojunction photovoltaic devices fabricated on metal substrates is presented.
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Method and structure for thin film photovoltaic materials using bulk semiconductor materials

Howard W. H. Lee
TL;DR: In this paper, a photovoltaic device with a nanostructured material positioned between an electron collecting electrode and a hole collecting electrode is presented, where negatively charged carriers generated by optical absorption by the nanostructure are preferentially separated into the electron transporting/hole blocking material.
Patent

Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells

Rommel Noufi, +6 more
TL;DR: In this article, a process for producing a slightly Cu-poor thin film of Cu(In,Ga)x(Se,S)2 comprises depositing a first layer (16), followed by depositing just enough Cu+Se+S or Cux+Se−S to produce the desired slightly Cupoor material layer (18).
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Methods and apparatus for forming thin-film heterojunction solar cells from i-iii-vi2 chalcopyrite compounds, and solar cells produced thereby

Reid A. Mickelsen, +1 more
TL;DR: In this article, a thin film solar cell has been used for the conversion of lumiere-energies electrique relativement eleve and caracterisee en ce que the cell comprises a heterojunction.
Patent

Method for forming photovoltaic cells employing multinary semiconductor films

Robert B. Love, +1 more
TL;DR: In this article, a planar magnetron having a plurality of continuous magnetically enhanced sputtering cathodes extending about a common axis is used to produce a film having a preselected concentration gradient of the constituent elements.
Patent

Process of forming a compound semiconductive material

Vijay K. Kapur, +2 more
TL;DR: In this paper, a process of forming a compound semiconductive material having a plurality of constituent elements comprising electrodepositing and heating the deposits to produce the desired semiconductor material is described.
Patent

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2

Reid A. Mickelsen, +1 more
TL;DR: An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI 2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 mic
Journal ArticleDOI

Large Grain Copper Indium Diselenide Films

T. L. Chu, +3 more
- 01 Sep 1984 - 
TL;DR: In this paper, large grain thin films of copper indium diselenide with a preferred {112} orientation have been prepared by deposition of nearly stoichiometric films on suitable substrates using vacuum evaporation or electrodeposition, and the heat treatment of Cu•In films in a hydrogen−selenium atmosphere at temperatures above 630°C.