International Solar Electric Technology

About: International Solar Electric Technology is a based out in . It is known for research contribution in the topics: Thin film & Solar cell. The organization has 28 authors who have published 40 publications receiving 1796 citations.

Method of making compound semiconductor films and making related electronic devices

Abstract: A method of forming a compound film includes the steps of preparing a source material, depositing the source material on a base to form a precursor film, and heating the precursor film in a suitable atmosphere to form a film. The source material includes Group IB-IIIA alloy-containing particles having at least one Group IB-IIIA alloy phase, with Group IB-IIIA alloys constituting greater than about 50 molar percent of the Group IB elements and greater than about 50 molar percent of the Group IIIA elements in the source material. The film, then, includes a Group IB-IIIA-VIA compound. The molar ratio of Group IB to Group IIIA elements in the source material may be greater than about 0.80 and less than about 1.0, or substantially greater than 1.0, in which case this ratio in the compound film may be reduced to greater than about 0.80 and less than about 1.0. The source material may be prepared as an ink from particles in powder form. The alloy phase may include a dopant. Compound films including a Group IIB-IVA-VA compound or a Group IB-VA-VIA compound may be substituted using appropriate substitutions in the method. The method, also, is applicable to fabrication of solar cells and other electronic devices.

Group I-III-VI2 semiconductor films for solar cell application

Abstract: This invention relates to an improved thin film solar cell with excellent electrical and mechanical integrity. The device comprises a substrate, a Group I-III-VI 2 semiconductor absorber layer and a transparent window layer. The mechanical bond between the substrate and the Group I-III-VI 2 semiconductor layer is enhanced by an intermediate layer between the substrate and the Group I-III-VI 2 semiconductor film being grown. The intermediate layer contains tellurium or substitutes therefor, such as Se, Sn, or Pb. The intermediate layer improves the morphology and electrical characteristics of the Group I-III-VI 2 semiconductor layer.