Patent
Method for liquid-phase thin film epitaxy
TLDR
In this paper, a device and method for liquid-phase thin film epitaxial growth are disclosed wherein yield and quality of semiconductors in the fabrication sequences are improved, where an electric furnace which is disposed outside a quartz tube, a plurality of boats which are disposed within the quartz tube in accordance with a sort of melting liquids and an auxiliary heating devices are disposed around the boats with a power source independent from the electric furnace.Abstract:
A device and method for liquid-phase thin film epitaxial growth are disclosed wherein yield and quality of semiconductors in the fabrication sequences are improved. The device comprises an electric furnace which is disposed outside a quartz tube, a plurality of boats which are disposed within the quartz tube in accordance with a sort of melting liquids and a plurality of auxiliary heating devices are disposed around the boats with a power source independent from the electric furnace. According to this fabrication sequence, after heating the inner part of the quartz tube up to a first temperature level by supplying the power source to the electric furnace, the melting liquids are firstly melted down enough by means of selectively heating the auxiliary heating devices up to a second temperature level higher than the first temperature level, the substrates are then moved to be in contact with the melting liquids and an epitaxial growth layer is consequently formed through selectively reducing the temperature of the auxiliary heating devices to other levels different from the first and second level.read more
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References
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Patent
Equilibrium growth technique for preparing PbS{HD x{b Se{hd 1-x {b epilayers
TL;DR: In this article, a high temperature method for the preparation of single and multiple epitaxial layers of single-phase lead sulfide-selenide, [Pb]a[SxSe1-x]1-a wherein x varies between one and zero, inclusive, and a=0.500+/-0.003, was presented.
Patent
Equilibrium growth technique for preparing PbSx Se1-x epilayers
TL;DR: In this paper, a high temperature method for the preparation of single and multiple epitaxial layers of single-phase lead sulfide-selenide, [Pb] a [S x Se 1-x ] 1-a wherein x varies between one and zero, inclusive, and a=0.500±0.003, was presented.
Patent
Method for producing a group IIB-VIB compound semiconductor crystal
TL;DR: In this paper, a temperature-difference method for growing a Group II-VI compound semiconductor crystal containing a Group VI element other than Te was proposed. But this method requires the crystal to be grown at a relatively low temperature by maintaining the vapor pressure of the VI group element at a predetermined value.
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Lpe technique for reducing edge growth
TL;DR: In this paper, a liquid phase epitaxy technique using conventional slider apparatus is described, in which, after heating the source solution to saturation, the solution temperature is rapidly reduced so that supersaturation takes place but heterogeneous nucleation does not.
Patent
Method and apparatus for producing a multilayer semiconductor device utilizing liquid growth
TL;DR: In this article, a method for performing successive mass production of identical semiconductor devices each having a multi-layer structure consisting of a plurality of epitaxial layers successively deposited on a substrate without requiring, for each deposition, any steps of cooling and re-heating a boat provided with a multiplicity of wells each containing a solution therein.
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