Patent
Non-linear control element for a flat electrooptical display screen and a method of fabrication of said control element
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TLDR
In this paper, a method of fabrication of non-linear control elements for large-area liquid-crystal displays of the flat-panel type is described, in which the following layers are stacked successively on a substrate: a first layer of metallic material, a second layer of undoped amorphous semiconductor material and a third layer of metal material.Abstract:
A method of fabrication of non-linear control elements as applicable to electrooptical displays and in particular to large-area liquid-crystal displays of the flat-panel type, in which the following layers are stacked successively on a substrate: a first layer of metallic material, a first layer of undoped amorphous semiconductor material, a layer of doped amorphous semiconductor material, a second layer of undoped amorphous semiconductor material, and a second layer of metallic material.read more
Citations
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Patent
Single crystal silicon arrayed devices for display panels
Paul M. Zavracky,John C. C. Fan,R.W. McClelland,Jeffrey Jacobsen,Brenda Dingle,Mark B. Spitzer +5 more
TL;DR: In this paper, a display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication and pixel arrays form light valves or switches that can be fabricated with control electronics in the thinfilm material prior to transfer.
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Liquid crystal display having essentially single crystal transistors pixels and driving circuits
TL;DR: A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication Pixel arrays form light valves or switches that can be fabricated with control electronics in the thinfilm material prior to transfer The resulting circuit panel is than incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.
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Processes for forming backplanes for electro-optic displays
Karl R. Amundson,Guy M. Danner,Gregg M. Duthaler,Peter T. Kazlas,Yu Chen,Kevin L. Denis,Nathan R. Kane,Andrew P. Ritenour +7 more
TL;DR: In this article, a nonlinear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier.
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Single crystal silicon transistors for display panels
TL;DR: A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication Pixel arrays form light valves or switches that can be fabricated with control electronics in the thinfilm material prior to transfer as mentioned in this paper.
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Method of fabricating single crystal silicon arrayed devices for display panels
TL;DR: In this paper, a display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication and pixel arrays form light valves or switches that can be fabricated with control electronics in the thinfilm material prior to transfer.
References
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Patent
Method of making p-doped silicon films
TL;DR: In this article, the p-dopant metal or boron gaseous materials in unique forms and conditions in a glow discharge silicon preferably hydrogen and fluorine compensated deposition process are used.
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Silicon nitride film and method of deposition
TL;DR: Azidotrimethylsilane (AZS) as discussed by the authors is a more stable and stable process for silicon nitride than other processes, and it is useful for protective and anti-reflective coatings, for insulating, and for masking.
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Method of producing thin-film transistor array
TL;DR: In this article, a method of manufacturing a thin film transistor array is simplified by processes to form source and drain electrodes at least of ITO film for pixel electrodes on a gate insulating film covering gate electrode and to form islands of an amorphous semiconductor film and a light shield film in the same masking process on the source and the drain electrodes.
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Semiconductor bulk oscillator
TL;DR: In this article, a cavity-type structure is formed transverse to the superlattice portion of a semiconductor bulk oscillator to extract outputs of electromagnetic energy at high frequencies obtained when an electric field above threshold is applied across the super lattice.
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Electroluminescent semiconductor device with passivation layer
Frank Z. Hawrylo,Henry Kressel +1 more
TL;DR: A semiconductor device has a body of a semiconductor material wherein arsenic, As, is a constituent component of the material as mentioned in this paper, and a passivation layer of a material selected from the group consisting of arsenic sulfide, As2 S3, arsenic selenide, as2 Se3, and As2 Te3, is on surfaces of the body.