Patent
Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics
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TLDR
In this paper, a first light deriving optical waveguide connected approximately perpendicularly to a light exit face at one side and having an optical axis different from that of the first light derived from a light waveguide at the other side, and a light emitting optical waveguide subjected to optical coupling with a periodical diffraction grating for optical resonance.Abstract:
The disclosure is directed to an improved semiconductor laser device which includes a first light deriving optical waveguide connected approximately perpendicularly to a light exit face at one side, a second light deriving optical waveguide connected approximately perpendicularly to another light exit face at the other side and having an optical axis different from that of the first light deriving optical waveguide, and a light emitting optical waveguide subjected to optical coupling with a periodical diffraction grating for optical resonance, and connected to end portions of the first and second light deriving optical waveguides within the semiconductor laser device.read more
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Patent
Active wavelength selection with resonant devices
Asher A. Friesem,A. Sharon +1 more
TL;DR: In this article, an electro-optically controlled optical element (300) including a diffraction grating (130) and a planar waveguide (122) associated with the grating and the waveguide being configured to undergo resonance of at least one of transmitted or reflected light at a wavelength selectable by means of an electrical input.
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Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
Geoff W. Taylor,Scott W. Duncan +1 more
TL;DR: In this paper, a high performance bipolar transistor device is realized from this structure by implanting p-type ions in a interdigitization pattern that forms a plurality of ion implant regions on both sides of the P-type modulation doped quantum well structure to a depth that penetrates the n-type ohmic contact layer.
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Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same
TL;DR: In this paper, a multilayer optical waveguide structure is realized by implanting n-type ions to form a pair of implant regions that define a waveguide region there between.
References
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Patent
Monolithically integrated distributed Bragg reflector laser
TL;DR: In a heterostructure distributed Bragg reflector laser, at least one multilayer waveguide substantially comprised of a silicon dielectric compound is monolithically integrated with an active semiconductor heter-structured medium.