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Photovoltaic cell and method of fabricating the same

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TLDR
In this paper, an anti-reflection film made of amorphous silicon nitride or the like is formed in this order on the main surface of an n-type single-crystalline silicon substrate.
Abstract
An i-type amorphous silicon film and an anti-reflection film made of amorphous silicon nitride or the like are formed in this order on a main surface of an n-type single-crystalline silicon substrate. On a back surface of the n-type single-crystalline silicon substrate are provided a positive electrode and a negative electrode next to each other. The positive electrode includes an i-type amorphous silicon film, a p-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate. The negative electrode includes an i-type amorphous silicon film, an n-type amorphous silicon film, a back electrode, and a collector electrode formed in this order on the back surface of the n-type single-crystalline silicon substrate.

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References
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Patent

Bilevel contact solar cells

TL;DR: In this article, the back surface of a solar cell is patterned by etching into an array of bilevel, interdigitated mesas and trenches, separated by inclined surfaces.
Journal ArticleDOI

27.5-percent silicon concentrator solar cells

TL;DR: In this paper, optical light trapping was used to enhance the absorption of weakly absorbed near bandgap light, achieving one-sun efficiencies under an AM1.5 spectrum normalized to 100 mW/cm2.
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TL;DR: In this article, a back surface point contact silicon solar cell having improved characteristics is fabricated by hydrogenating a silicon-silicon oxide interface where hydrogen atoms are diffused through silicon nitride and silicon oxide passivating layers on the surface of a silicon substrate.
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Photoelectric conversion element and method of manufacturing the same

TL;DR: In this paper, a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate is provided.