Patent
Piezoelectric thin film element, method for producing piezoelectric thin film, and piezoelectric thin film device
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TLDR
In this article, the authors proposed a method for producing a piezoelectric thin-film element with a lead-free device having long life and a high piezelectric constant.Abstract:
PROBLEM TO BE SOLVED: To provide: a piezoelectric thin film element with which a lead-free device having long life and a high piezoelectric constant can be manufactured with a high yield; a method for producing the piezoelectric thin film; and a piezoelectric thin film device.SOLUTION: The piezoelectric thin film element 1 includes: a substrate 10; and a piezoelectric thin film 40 formed on the substrate 10 and having a niobium oxide-based perovskite structure represented by general formula: (NaKLi)NbO(0≤x≤1, 0≤y≤1, 0≤z≤0.2 and x+y+z=1). The piezoelectric thin film 40 has: an organic molecule selected from the group consisting of CH, CH, CH, CH, CH, CHOH, CHOH and CHO; a molecule containing a group selected from the group consisting of a hydroxyl group, an acyl group, a carbonyl group, an alkynyl group and a carboxyl group; or a molecule containing a bond selected from the group consisting of an O-H bond, a C-O bond, a C=O bond, a C≡C bond and an O-O bond.read more
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Piezoelectric composition, piezoelectric element and sputtering target
TL;DR: In this paper, a piezoelectric composition with a composition represented by formula (5) as the main component is presented, where the composition represents a first perovskite-type oxide represented by the first component, a second pervskite type oxide representing by the second component, and a third tungsten bronze type oxide representation by the third component.
Patent
Piezoelectric element, piezoelectric device and manufacturing method therefor
Kazufumi Suenaga,和史 末永,Kenji Shibata,憲治 柴田,Kazutoshi Watanabe,和俊 渡辺,Akira Nomoto,明 野本,Fumimasa Horikiri,文正 堀切 +9 more
TL;DR: In this article, the difference between a maximum value and a minimum value of energy at the Na-K absorption end of the piezoelectric layer 4 in the film thickness direction, measured by electron energy loss spectrometry or X-ray absorption fine structure analysis, is 0.8 eV or less.
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Piezoelectric laminate, manufacturing method of same, surface acoustic wave element, thin film piezoelectric resonator, and piezoelectric actuator
TL;DR: In this paper, the problem of providing a piezoelectric laminate including a potassium sodium niobate layer formed on a substrate was solved by adding a template layer to the template layer.
Patent
Method for producing potassium niobate deposit, potassium niobate layer, surface acoustic wave device and its manufacturing method, and electronic equipment
TL;DR: In this article, the authors proposed a method for producing a potassium niobate deposit including a thin film of potassium Niobate layer, which comprises a step of forming a PNI layer 13 on or above the substrate 11, and another step of heat treating at least the PPI layer 13 under pressure lower than atmospheric pressure.