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Proceedings ArticleDOI

Properties of a 248-nm DUV laser mask pattern generator for the 90-nm and 65-nm technology nodes

TLDR
The properties of a second-generation DUV laser pattern generator based on spatial light modulator technology and designed to meet the requirements of the 90-nm to 65-nm technology nodes are presented and major changes compared to its predecessor are pointed out.
Abstract
This paper presents the properties of a second-generation DUV laser pattern generator based on spatial light modulator technology and designed to meet the requirements of the 90-nm to 65-nm technology nodes. The system, named Sigma7300, is described and major changes compared to its predecessor are pointed out. These changes result in improved pattern accuracy and fidelity as well as system reliability and maintenance. This improved performance is accompanied with greatly reduced writing times of typically 3 Hrs. per mask. Performance data is presented that shows the system meets the resolution requirement of 260 nm with CD linearity of 10 nm and assist line resolution of 140 nm. CD uniformity data and registration data are also presented that indicates that the system meets the requirements for most layers at the 90-nm and 65-nm nodes.

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Citations
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Proceedings ArticleDOI

A high-end mask writer using a spatial light modulator

TL;DR: In this article, the authors present the properties of the Sigma7300, a commercial DUV laser pattern generator based on spatial light modulator (SLM) technology designed to meet the requirements of the 65-nm technology node and below.
Proceedings ArticleDOI

Second level exposure for advanced phase shift mask applications using the SLM-based Sigma7300 DUV mask writer

TL;DR: The Sigma7300 DUV mask writer has the attributes required for advanced PSM applications: high resolution, tight CD uniformity and pattern placement, an accurate alignment system, and grid matching to first level exposures.
Proceedings ArticleDOI

Sigma7500: an improved DUV laser pattern generator addressing sub-100-nm photomask accuracy and productivity requirements

TL;DR: Sigma7500 as discussed by the authors is a 2-pass mask pattern generator with full fidelity and addressability in each writing pass, which can be used for all binary mask layers at the 90 nm technology node, and for about half the layers at 45 nm.
Proceedings ArticleDOI

Second level exposure for phase shift mask applications using an SLM-based DUV mask writer

TL;DR: In this article, a DUV mask writer with a spatial light modulator (SLM) was used for phase shift mask (PSM) patterning at the 65 nm and 45 nm nodes.
Proceedings ArticleDOI

Production performance of a Sigma7300 DUV mask writer

TL;DR: SLM-based DUV laser writers are gaining acceptance for 2nd level PSM and binary mask patterning These writers can use an e-beam compatible resist enabling tool and process sharing.
References
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Proceedings ArticleDOI

Pattern generation with SLM imaging

TL;DR: In this paper, the critical elements of the imaging in the implementation of such a pattern generator are identified, and how the laser illumination, SLM chip, and optics collectively generate the image, and in particular, that these elements can be manufactured and integrated to specification.
Proceedings ArticleDOI

Resolution extensions in the Sigma 7000 imaging pattern generator

TL;DR: SIGMA 7100 as mentioned in this paper is a pattern generator using optical SLM (Spatial Light Modulator) technology, which is based on the SIGMA 7X pattern generator.
Proceedings ArticleDOI

Controlling CD Variations in a Massively Parallel Pattern Generator

TL;DR: A practical method is presented for performing this calibration which greatly improves the micromirror grayscale uniformity and reduces CD error contribution from the SLM to less than 2nm.

New architecture for Laser pattern generators for 130 nm and beyond

TL;DR: In this article, a new breed of pattern generators for photomasks using a new DUV spatial light modulator (SLM) technology is under development in a collaborative effort between Micronic Laser Systems AB, Taby, Sweden and the Fraunhofer Institute for Microelectronic Circuits and Systems (FhG-IMS), Dresden, Germany.
Proceedings ArticleDOI

Transparent corner enhancement scheme for a DUV pattern generator

TL;DR: In this paper, the corner radius can be tuned in a range of radii with a negligible effect on the process latitude to reduce the write times of e-beam pattern generators.
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