Journal ArticleDOI
Resistivity Correction Factor for the Four-Ring Probe Method
Masato Yamashita,Toshifumi Nishii,Atsushi Iwata,Hiroshi Electronic Pr. Kurihara,Nobuo Tanaka +4 more
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TLDR
In this paper, the resistivity correction factor (RCF) is derived analytically for correcting data measured by means of the four-ring probe method and for obtaining resistivity of the sample, and the properties of the RCF are discussed on the basis of the theoretical analysis.Abstract:
The four-ring probe method which was devised as a method of measuring resistivity is described. This method is applicable to the system consisting of a circular disk sample and a four-ring probe array. The resistivity correction factor (RCF), which is necessary for correcting data measured by means of the four-ring probe method and for obtaining the resistivity of the sample, is derived analytically. The properties of the RCF are discussed on the basis of the theoretical analysis. It is demonstrated by the experimental results that (i) the RCF corrects data accurately, (ii) it is insensitive to the shape of the sample and the measurement position as long as the thickness of the sample is less than the probe spacing, and (iii) the four-ring probe method is compatible with the four-point probe method.read more
Citations
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Journal ArticleDOI
A laboratory on the four-point probe technique
TL;DR: In this paper, a classic electrostatics experiment can be modified to be a four-point probe lab experiment, where the students use the fourpoint probe technique to investigate how the measured resistance varies as a function of the position of the electrodes with respect to the edge of the sample.
Book ChapterDOI
Chapter 4 Optical Properties of Semiconductors under Pressure
Alejandro R. Goñi,K. Syassen +1 more
TL;DR: In this paper, the effect of high pressure on semiconductor band-structure parameters is discussed, which are largely determined by the magnitude of band gaps and the characteristics of the electronic states at valence-and conduction-band extrema.
Journal ArticleDOI
Desorption of molecular and atomic fragment-ions from solid CCl4 and SiCl4 by resonant photoexcitation at chlorine K-edge
TL;DR: In this article, the photon-energy dependence of the desorption yield around the Cl K-edge was investigated using synchrotron radiation in the 2810-2850 eV photon energy range.
Journal ArticleDOI
Photon-stimulated ion desorption from DCOO/Si(100) near the O K-edge
TL;DR: In this article, the ion desorption from deuterated formic acid chemisorbed on Si(100) has been studied using pulsed synchrotron radiation in the energy region of the oxygen 1s electron excitation.
Journal ArticleDOI
Site-specific ion desorption from condensed C- and N-deuterated formamide near the carbon and nitrogen K-edge
Hiromi Ikeura-Sekiguchi,Tetsuhiro Sekiguchi,Motoyasu Imamura,Nobuyuki Matsubayashi,Hiromichi Shimada,Yuji Baba +5 more
TL;DR: In this article, the site-specific core-electron excitation of condensed deuterated formamide has been studied by site specific core-excitation, and it was shown that the desorption of condensed formamide depends on the antibonding character of the excited state and also occurs around the chosen atomic site where the core electron excitation takes place.
References
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Journal ArticleDOI
Resistivity Correction Factor for the Four-Probe Method: Experiment I
TL;DR: In this paper, the theoretically derived resistivity correction factor F is applied to a system consisting of a disk sample and a four-probe array and measured on isotropic graphite disks and crystalline ITO films.