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Semiconductor device having an antireflective coating

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TLDR
A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector as discussed by the authors, with a refractive index intermediate that of the semiconductor crystal and the exterior environment.
Abstract
A polycrystalline silicon layer provides an antireflective coating on a semiconductor surface of a photo-sensitive detector, the polycrystalline silicon layer containing from 25 to 45 atomic percent of oxygen and having a refractive index intermediate that of the semiconductor crystal and the exterior environment.

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References
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Amorphous silicon film as a uv filter

TL;DR: In this article, the use of thin amorphous silicon film as a narrow-band rejection filter is discussed. But this filter is used either as a mask to UV light in semiconductor device processing or as a protective shield for solar cells which overheat in the presence of ultraviolet light.
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TL;DR: In this paper, the anti-reflective coating and a metallic current collector are placed on the top surface of the solar cell using the technique of lift-off photolithography and the oxidation of elemental tantalum which is evaporated onto the solar cells.
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Method of manufacturing semiconductor devices in which silicon oxide regions inset in silicon are formed by a masking oxidation, wherein an intermediate layer of polycrystalline silicon is provided between the substrate and the oxidation mask

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Light-sensitive semiconductor device

TL;DR: In this article, the authors proposed a light-sensitive semiconductor device with several light sensitive elements, mutually separated from each other, arranged in the form of a matrix in rows and columns on a doped semiconductor substrate.