Patent
Semiconductor memory device
Ando Satoyuki,Sato Hideo +1 more
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TLDR
In this article, the unstable state of a potential due to alpha particles was eliminated by forming a load with nonlinear impedance in a memory cell which are a couple of inverters equipped with loads and driver transistors (TR) and composed of an FF.Abstract:
PURPOSE:To eliminate the unstable state of a potential due to alpha particles by forming a load with nonlinear impedance in a memory cell which are a couple of inverters equipped with loads and driver transistors (TR) and composed of an FF. CONSTITUTION:Diodes D1 and D2 are connected in parallel to load resistances R1 and R2 and then the V-I characteristic that the load impedance based upon the diode D1 or resistance R2 and diode D2 indicates is nonlinear. Therefore, the potential at a point (a), i.e. voltage applied to the resistance R2 drops be cause of an electron generated by alpha particles to prevent storage from being inverted owing to the bistability of the FF. Namely, the junction dielectric strength of the diode D2 is broken down the moment the voltage drop occurs, and a current path is opened between V1 and (a) to supply a voltage, thereby maintaining the potential at the point (a). Consequently, the unstableness of the potential due to alpha particles which occurs possibly to the storage node of the memory cell is eliminated.read more
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