Patent
Signal storage device
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TLDR
In this paper, a solid-state device consisting of an interface between a semiconductor material and an insulator material, such as in a metaloxide-semiconductor (MOS) sandwich, serves to store electric charge when an electron beam penetrates the MOS material.Abstract:
A solid-state device consisting of an interface between a semiconductor material and an insulator material, such as in a metal-oxide-semiconductor (MOS) sandwich, serves to store electric charge when an electron beam penetrates the insulator material. The stored charge effects the size of a depletion region in the semiconductor material adjacent the interface and, subsequently, when an electron beam penetrates the depletion region and creates electrons in the semiconductor conduction band and corresponding holes in the semiconductor valence band, the built-in field in the depletion region sweeps the electrons and holes in opposite directions causing a substantial transient electron-hole current, which can be registered by an external current detector. Thus, the same area of the insulatorsemiconductor interface (or the MOS sandwich) serves to store an electric charge when conditioned in one manner by an electron beam and produces an output current pulse indicative of the stored charge when conditioned in another manner by an electron beam and the area of the interface which is involved need be no greater than approximately the cross-section area of the electron beam.read more
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References
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Mis device and method for storing information and providing an optical readout
TL;DR: In this paper, an information storing method and a storing device using a conductor-insulator-semiconductor (CIS) structure as a conductor storage element is disclosed within, where minority carriers are controllably generated within the semiconductor in proportional response to an informationbearing signal such as electromagnetic radiation flux.
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