Patent
Silicon based thin film solar cell
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TLDR
In this article, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon-based thin film solar cell may be provided efficiently and at low cost.Abstract:
According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.read more
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References
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Gallium-nitride-based compound semiconductor device
Shiro Sakai,Tomoya Sugahara +1 more
TL;DR: In this paper, a multi-layer quantum well structure (MQW) in which an InGaN well layer and an AlInGaN barrier layer are superimposed was proposed to increase the effective band gap and reduce the light emitting wavelength.
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