Patent
Silicon nitride substrate
Frank J. Avella,Leslie J. Bowen +1 more
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TLDR
In this article, a densified silicon nitride/magnesium oxide article which can be used as a substrate for a silicon device such as an integrated circuit chip is made by a unique process which imparts to the densified article of the combined properties of high relative density, low relative dielectric constant, low Dielectric loss tangent, high thermal conductivity, thermal expansion coefficient matched to that of silicon, and a high modulus of rupture without hot pressing.Abstract:
A densified silicon nitride/magnesium oxide article which can be used as a substrate for a silicon device such as an integrated circuit chip is made by a unique process which imparts to the densified article of the combined properties of high relative density, low relative dielectric constant, low dielectric loss tangent, high thermal conductivity, thermal expansion coefficient matched to that of silicon, and a high modulus of rupture without hot pressing.read more
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Silicon nitride circuit board
TL;DR: In this paper, a silicon nitride circuit board with a metal circuit plate and a high thermal conductive substrate having a thermal conductivity of not less than 60 W/m K is presented.
Patent
Method for conditioning halogenated polymeric materials and structures fabricated therewith
Harry R. Bickford,Peter J. Duke,Elizabeth Foster,Martin J Goldberg,Voya R. Markovich,Linda C. Matthew,Donald Gene Mcbride,Terrence Robert O'toole,Stephen L. Tisdale,Alfred Viehbeck +9 more
TL;DR: In this article, a halogenated polymeric material is exposed to a reducing agent and/or an electrolyte and applied voltage to render exposed portions capable of being metallized and of being etched.
Patent
Silicon nitride powder, silicon nitride sintered body, sintered silicon nitride substrate, and circuit board and thermoelectric module comprising such sintered silicon nitride substrate
TL;DR: A silicon nitride sintered body comprising Mg and at least one rare earth element selected from the group consisting of La, Y, Gd and Yb, the total oxide-converted content of the above elements being 0.6-7 weight %, with Mg converted to MgO and rare earth elements converted to rare earth oxides RE x O y.
Patent
Silicon nitride sintered body
TL;DR: A silicon nitride sintered body comprising α-silicon nitride including α-sialon and β-Sialon including β-Silicon Nitride in which the content of the surface part thereof is less than its content in the inner part thereof was described in this paper.
Patent
Heat exchanger having silicon nitride substrate for mounting high power electronic components
TL;DR: A heat exchanger includes a silicon nitride substrate. Electronic components may be surface mounted to the substrate and a fluid passageway allows a coolant to flow therethrough and carry away heat from the electronic components as mentioned in this paper.
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Patent
High density high strength S13 N4 ceramics prepared by pressureless sintering of partly crystalline, partly amorphous S13 N4 powder
TL;DR: Si 3 N 4 ceramics exhibiting densities and modulus of rupture values heretofore obtainable only by hot pressing are produced by pressureless sintering of powder compacts of partly amorphours, partly crystalline Si 3 n 4 powder containing between 5 and 60 percent by weight of crystalline material as mentioned in this paper.
Patent
Silicon nitride sintered bodies and a method for producing the same
Keiji Matsuhiro,Minoru Matsui +1 more
TL;DR: In this article, a powder of silicon nitride containing not greater than 2% by weight of oxygen with MgO and Al 2 O 3 was used to produce a mixture of silicon oxide and magnesium sialon, which was then fired at a temperature of 1,650°-1,850° C. in nitrogen or an inert gas atmosphere.
Journal ArticleDOI
Sintering of silicon nitride in a powder bed
TL;DR: In this paper, the authors propose to embed the powder compacts in a loose powder mixture to control both the decomposition of the Si3N4 and the loss by volatilization of the MgO.
Patent
Method of manufacturing silicon nitride products
TL;DR: In this paper, a mixture of silicon nitride in powder form together with a fluxing agent and a temporary binder is first produced, and a preform of substantially uniform density less than the density of the required product is then formed, the dimensions of the preform in the direction of subsequent hot pressing to the final product in the same direction being arranged to be in the ratio of preform density to the required final density.
Patent
Pressureless sintering silicon nitride powders
TL;DR: In this paper, a powder-based method of producing a silicon nitride article by powder techniques was proposed, where a silicon-nitride powder is used as a starting material, mixed with a densification aid, and the powder is heated rapidly to the sintering/densification temperature.