Patent
System and method for bonding wafers
Paul P. Merchant,Storrs T. Hoen +1 more
TLDR
In this article, a layer of Pd is formed on a first wafer and an adhesion layer of chromium (Cr) attaches the palladium layer to the second wafer, and the engaged wafers are annealed to form a palladium-silicide (PdSi) bond.Abstract:
Two wafers are bonded together through an annealing process that maintains temperatures at CMOS compatible levels (i.e., below 500 degrees Celsius). A layer of palladium (Pd) is formed on a first wafer. Preferably an adhesion layer of chromium (Cr) attaches the palladium layer to the first wafer. The palladium layer is engaged with silicon (Si) from a second wafer, and the engaged wafers are annealed to form a palladium-silicide (PdSi) bond between the palladium layer of the first wafer and the silicon of the second wafer. In addition to bonding the first wafer to the second wafer, the palladium-silicon bond may be used to form an electrical connection between the two wafers so that circuits on both wafers may communicate to one another through the palladium-silicon bond.read more
Citations
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Patent
Acoustic resonator performance enhancement using alternating frame structure
TL;DR: In this paper, an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region is described.
Patent
Piezoelectric resonator structures and electrical filters having frame elements
Tiberiu Jamneala,Richard C. Ruby +1 more
TL;DR: In this article, a film bulk acoustic resonators (FBARs) having frame elements and filters including the resonators are described, and the frame elements, filters and resonators of the FBARs are described.
Patent
Acoustic resonator structure comprising a bridge
John Choy,Chris Feng,Phil Nikkel +2 more
TL;DR: An acoustic resonator comprises a first electrode, a second electrode and a piezoelectric layer disposed between the first and second electrodes as mentioned in this paper, and a reflective element disposed beneath the first electrode.
Patent
Acoustic resonator structure having an electrode with a cantilevered portion
John Choy,Chris Feng,Phil Nikkel +2 more
TL;DR: An acoustic resonator comprises a first electrode and second electrode comprising a plurality of sides, and at least one of the sides of the second electrode comprises a cantilevered portion.
PatentDOI
Acoustic resonator performance enhancement using selective metal etch
Ronald S. Fazzio,Hongjun Feng +1 more
TL;DR: An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode is described in this paper, where the second electrode lies in a first plane and has an edge.
References
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Patent
Palladium welding of a semiconductor body
TL;DR: In this paper, a method of bonding two dissimilar planar bodies, one of which is a semiconductor, was proposed. But the method was not suitable for the case of GaAs.
Patent
Method for adhesion of silicon or silicon dioxide plate
TL;DR: In this paper, a silicon wafer, silicon dioxide wafer or silicon wafers having a silicon dioxide film thereon can be mutually adhered, where a refractory metal such as zirconium is deposited by sputtering on a flat surface to be adhered and tightly stacked onto another substrate made of silicon.
Patent
Palladium enhanced fluxless soldering and bonding of semiconductor device contacts
Chin-An Chang,Nicholas George Koopman,Judith Marie Roldan,Steven Strickman,Kamalesh K. Srivastava,Helen Li Yeh +5 more
TL;DR: In this paper, the fluxless bonding in a reducing atmosphere of integrated circuit contacts containing copper is enhanced using a layer of 200 to 1500 Angstrom thick palladium which inhibits copper oxide formation before fusion and reduces all oxides to promote wetting during fusion.
Patent
Method for fabricating Tungsten local interconnections in high density CMOS circuits
TL;DR: In this article, a method for fabricating tungsten local interconnections in high density CMOS circuits, and also providing high density MCOS circuits having local inter connections formed of Tungsten is presented.