Patent
Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process
TLDR
In this article, a method for operating a substrate processing chamber includes after performing a process using a fluorine-based gas in the substrate chamber: a) during a first predetermined period, supplying a gas mixture to the substrate process chamber including one or more gases selected from a group consisting of molecular oxygen, molecular nitrogen, nitric oxide and nitrous oxide and supplying RF power to strike plasma.Abstract:
A method for operating a substrate processing chamber includes after performing a process using a fluorine-based gas in the substrate processing chamber: a) during a first predetermined period, supplying a gas mixture to the substrate processing chamber including one or more gases selected from a group consisting of molecular oxygen, molecular nitrogen, nitric oxide and nitrous oxide and supplying RF power to strike plasma in the substrate processing chamber; b) during a second predetermined period after the first predetermined period, supplying molecular hydrogen gas and RF power to the substrate processing chamber; c) repeating a) and b) one or more times; d) purging the substrate processing chamber with molecular nitrogen gas; e) increasing chamber pressure; f) evacuating the substrate processing chamber; and g) repeating d), e) and f) one or more times.read more
Citations
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Patent
Removal methods for high aspect ratio structures
TL;DR: In this paper, a fluorine-containing precursor is inserted into a semiconductor processing chamber to generate plasma effluents of the precursors of the fluorine containing precursor.
Patent
Selective cobalt removal for bottom up gapfill
TL;DR: In this paper, the authors describe methods for removing cobalt material from a semiconductor processing chamber by forming a plasma of the chlorine-containing precursor to produce plasma effluents.
Patent
Airgap formation with damage-free copper
TL;DR: In this article, a remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents, which are used to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber.
Patent
Shaped Etch Profile with Oxidation
TL;DR: In this article, a remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents, which may then be used to modify the oxidized silicon substrate.
Patent
Adjustable extended electrode for edge uniformity control
TL;DR: In this paper, the authors describe a process kit for a substrate processing chamber, which includes a ring having a first ring component and a second ring component, an adjustable tuning ring, and an actuating mechanism.
References
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Patent
Method of in situ cleaning a vacuum plasma processing chamber
TL;DR: In this paper, surfaces having semiconductor oxides, metal oxides and hydrocarbons are in situ cleaned by introducing water vapor and SF6 and/or NF3 gas in the presence of a plasma discharge.
Patent
Plasma clean method for deposition chamber
TL;DR: Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided in this article, which involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagents in a remote plasma generator and then further delivering in-situ plasma energy while the cleaned reagent mixture is introduced into the deposition room.
Patent
Method for cleaning reaction chamber using pre-cleaning process
Tatsuhiro Okabe,Atsuki Fukazawa +1 more
TL;DR: In this article, a method for cleaning a reaction chamber is conducted after depositing an oxide, nitride, or oxynitride film on a substrate in the reaction chamber having interior surfaces on which oxide or nitride is accumulated.
Patent
Method for improving stability of tungsten chemical vapor deposition
William G. Petro,Farhad Moghadam +1 more
TL;DR: In this paper, a method for cleaning a chemical vapor deposition (CVD) process for depositing tungsten was proposed, which consists of cleaning the chamber with nitrogen trifluoride (NF 3 ) and hydrogen (H 2 ) nitrogen (N 2 ) plasmas.
Patent
Method of cleaning a CVD reaction chamber using an active oxygen species
TL;DR: In this paper, a method for cleaning CVD reaction chambers with active oxygen species is presented, which can be either generated within the reaction chamber or generated remotely and introduced into the reaction chambers.