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Journal ArticleDOI

Temperature Dependence of Hole Transport in Vitreous Selenium

Mark D. Tabak
- 15 Sep 1970 - 
- Vol. 2, Iss: 6, pp 2104-2108
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This article is published in Physical Review B.The article was published on 1970-09-15. It has received 43 citations till now. The article focuses on the topics: Selenium.

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Journal ArticleDOI

Photogeneration of charge carriers in amorphous selenium

TL;DR: In this article, a model is proposed to explain the outstanding features of the free-carrier photogeneration process in amorphous selenium, where the excitation of an electron-hole pair and the subsequent separation or recombination are considered as a function of photon energy, applied electric field and temperature.
Journal ArticleDOI

Drift mobility studies in vitreous arsenic triselenide

TL;DR: In this paper, the drift of charge carriers in thin vitreous films of arsenic triselenide has been examined by a transit time technique, and it was found that the hole mobility was strongly dependent on temperature and applied electric field.
Journal ArticleDOI

Relaxation induced changes in electrical behavior of glassy chalcogenide semiconductors

TL;DR: In this article, the effects of structural relaxation and the glass transition process are clearly manifested in the electrical behavior of glassy-chalcogenide films and it is demonstrated that in the vicinity of Tg the population of these states varies systematically with the structural state of the glassy film always tending toward a temperature-dependent quasi-equilibrium.
Journal ArticleDOI

Xerographic time of flight experiment for the determination of drift mobility in high resistivity semiconductors

TL;DR: In this paper, a practical and inexpensive xerographic time-of-flight (XTOF) apparatus which can be utilized in investigating high resistivity semiconductors is described in detail.
Journal ArticleDOI

Field-dependent carrier transport in non-crystalline semiconductors

TL;DR: In this paper, an electric field dependence of the d.c. conductivity and of the trap-limited carrier drift mobility is shown to occur in a range of non-crystalline semiconductors.
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