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Patent

Thin film transistor and display panel using the transistor

TLDR
In this paper, a double gated thin film field effect transistor (DGFET) was proposed, in which a thin layer of indium is provided on either side of the cadmium selenide conducting channel and after annealing enhances the transconductance of the device and reduces trapping of charge in the semiconductor.
Abstract
A double gated thin film field effect transistor in which cadmium selenide is the semiconductor material. A thin layer of indium is provided on either side of the cadmium selenide conducting channel and after annealing enhances the transconductance of the device and reduces trapping of charge in the semiconductor. The source and drain contacts of the device are a combination of an indium layer and a copper layer which improve the performance of the device.

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Patent

Semiconductor device and method for forming the same

TL;DR: In this article, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer, a thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising silicon oxide film formed on the thin film.
Patent

Electro-Optical Device and Electronic Device

TL;DR: In this article, a multi-gate structure was proposed to prevent hot carrier injection and reduce the OFF current value of the EL display, where the LDD region of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot-carrier injection and reduction of OFF current values.
Patent

Active matrix display with capacitive light shield

TL;DR: In this paper, an active matrix type display apparatus is presented, which includes a first electrode substrate having a transparent insulation substrate on which a thin film transistor is driven by the thin file transistor and a connecting portion for connecting the transistor with the transparent display pixel electrode.
PatentDOI

Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec

TL;DR: In this article, a method and apparatus for compression and decompression of audio signals using a novel boundary analysis and synthesis framework to substantially reduce quantization-induced frame or block discontinuity is presented.
Patent

Thin film transistors, thin film transistor arrays, and a process for preparing the same

TL;DR: In this article, a shadow mask is used to deposit the semiconductive pad and the first conductive electrode is then moved in a direction 180° with respect to the first direction a distance of approximately twice that of the original motion and the second conductor applied by deposition through the openings in the mask.
References
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Patent

Cdse or cds-se photoconductors doped with a ib element and either bromine or iodine

TL;DR: In this article, it was shown that at least one of the CDS-SE participants used a IB group ELEMENT SUCH AS COPPER OR SILVER AS ACTIVATOR and at LEAST one of BROMINE and IODINE as COACTIVator.
Patent

P-n junction semiconductor devices

Z Kun
TL;DR: In this paper, a P-conductivity type wide band gap semiconductor material is produced by vacuum evaporating a III-V compound semiconductor layer onto and then diffusing into a crystalline II-VI compound substrate, specifically a zinc chalcogenide.