Patent
Thin-film transistor and method of fabricating the same
Shigeo Aoki,Yasuhiro Ukai +1 more
TLDR
A thin-film transistor comprises a source electrode and a drain electrode formed in a spaced-apart relation to each other on a substrate, a semiconductor layer formed over the source and drain electrodes, a gate insulating film formed on the semiconductor layers and a gate electrode on the gate INSulating film as discussed by the authors.Abstract:
A thin-film transistor comprises a source electrode and a drain electrode formed in a spaced-apart relation to each other on a substrate, a semiconductor layer formed over the source and drain electrodes, a gate insulating film formed on the semiconductor layer and a gate electrode on the gate insulating film. First and second ohmic contact layers are formed in the entirety of the surface regions of the semiconductor layer which are in contact with the source and drain electrodes.read more
Citations
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Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Electro-optical device
TL;DR: In this article, an electro-optical device having a plurality of pixels, including a majority of EL elements, provides a gray-scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period, and a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one-frame period.
Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
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Gate insulated field effect transistors and method of manufacturing the same
TL;DR: In this paper, a thin film field effect transistors and manufacturing method for the same are described, where the channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen.
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Electro-optical device and method for manufacturing the same
TL;DR: In this paper, a central processing unit (CPU) and a memory, necessary to drive an electric device, are formed using single crystalline semiconductor integrated circuit chips, and the chips are connected with wirings formed on the substrate by a chip on glass (COG) method, a wire bonding method or the like, to manufacture the electric device having a liquid crystal display (LCD) on one substrate.
References
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Patent
Method for making a thin film transistor
TL;DR: In this paper, a thin-film transistor (TFT) of a self-aligned structure is described, where a pair of a source electrode and a drain electrode are formed in alignment with a gate electrode and in contact with low resistance areas formed at both side portions of a semiconductor layer deposited on an insulating substrate.
Journal ArticleDOI
Dual-gate a—Si:H thin film transistors
TL;DR: Dual-gate accumulation mode thin film transistors have been fabricated for the first time in a-Si:H on bulk glass substrates in this article, where drain currents in the range of 5-10 µA were obtained for gate biases of 15 V.
Patent
Method of producing thin film transistor array
TL;DR: In this article, a method of producing thin film transistor arrays and having at least 7 steps including: a first step of forming a first electrode layer uniformly over an insulating substrate, a second step forming electrodes, such as drain and source electrodes and bus bars with a desired pattern by photoetching the first electrode, a third step of creating a uniform semiconducting layer on the surface of the substrate having the patterned electrodes, a fourth step of successively forming a uniform insulating layer over the uniformly deposited semiconductor layer while keeping the array in a vacuum, a fifth step
Patent
Method of manufacturing insulated gate thin film field effect transistors
Seigo Togashi,Kanetaka Sekiguchi +1 more
TL;DR: In this paper, a method of manufacturing insulated gate thin film field effect transistors is disclosed in which first and second closely adjacent anodic oxidation electrodes are formed on an electrically insulating substrate, and a semiconducting layer is formed on the insulating substrategies and the electrodes are exposed.
Patent
Thin film field effect transistors utilizing a polypnictide semiconductor
TL;DR: In this article, the Schottlky barrier thin film field effect transistor (SFLFET) was described and a process for the production of a transistor characterised by vacuum plasma sputtering of successive layers in contact of a semiconductor comprising MP x, where M represents at least one alkali metal; P; represents pnictide; and x ranges from 15 to infinity.