Patent
Vertically integrated sensor structure and method
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TLDR
In this article, a vertically integrated sensor structure (60) includes a base substrate (71) and a cap substrate (72) bonded to the base substrate, which is used for sensing an environmental condition.Abstract:
A vertically integrated sensor structure (60) includes a base substrate (71) and a cap substrate (72) bonded to the base substrate (71). The base substrate (71) includes a transducer (78) for sensing an environmental condition. The cap substrate (72) includes electronic devices (92) formed on one surface to process output signals from the transducer (78). The sensor structure (60) provides an integrated structure that isolates sensitive components from harsh environments.read more
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References
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Book
Sensor Technology and Devices
TL;DR: This book offers an insight into different aspects of the manufacturing and characterization of (almost exclusively) silicon sensors, devices that, without doubt, are the most widely used in the sensor arena, although other emerging materials and compounds are being increasingly employed.
Patent
Miniature pressure transducer for medical use and assembly method
TL;DR: In this paper, a fluidtight, hermetically sealed, miniature transducer adapted to be inserted into the human body and useful for directly monitoring internal fluid or pneumatic pressures within a human body is disclosed.
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Media compatible pressure transducer
TL;DR: In this paper, an absolute pressure transducer was proposed for use in various deleterious mediums. But the transducing was performed with a single wafer containing a gage sensor configuration on one portion and an absolute sensor configuration in another adjacent portion.
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A method for manufacturing semiconductor absolute pressure sensor units
TL;DR: In this article, a method for manufacturing semiconductor absolute pressure sensor units includes anodically bonding a silicon sensor wafer (10) and a silicon cap wafer with a borosilicate glass layer (32) disposed therebetween so as to surround respective sensor chips on the silicon sensor Wafer by introducing a matrix shaped conductive layer (28) in contact with and in alignment with the borosile glass layer.
Patent
Semiconductor absolute pressure transducer assembly and method
Minoru Takahashi,Takahiko Tanigami,Kaoru Uchiyama,Minorikawa Hitoshi,Motohisa Nishihara,Kanji Kawakami,Seiko Suzuki,Hiroaki Hachino,Yutaka Misawa +8 more
TL;DR: In this article, a semiconductor pressure transducer assembly consisting of a silicon diaphragm assembly and a glass covering member is presented. But the assembly is not shown in detail.