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Can both band gapand refractive index increase together in semiconductors? 


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Yes, both band gap and refractive index can increase together in semiconductors. While there is typically an inverse correlation between band gap and refractive index, there are interesting outliers that defy this trend. In a study conducted on more than 4000 semiconductors, it was found that the negative effect of a large band gap on the refractive index can be counterbalanced in two ways. First, by limiting the difference between the direct band gap and the average optical gap, which can be achieved through a narrow distribution in energy of the optical transitions. Second, by increasing the effective frequency, which can be achieved through a high number of transitions or a high average probability for these transitions. These findings have implications for the search for new compounds in optical applications.

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The paper does not directly address whether both band gap and refractive index can increase together in semiconductors.
The paper does not directly address whether both band gap and refractive index can increase together in semiconductors.
The paper confirms the general inverse trend between refractive index and band gap in semiconductors, suggesting that it is unlikely for both properties to increase together.
The paper confirms the general inverse trend between refractive index and band gap in semiconductors, suggesting that it is unlikely for both properties to increase together.

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What is the relationship between the refractive index and the band gap of doped praseodymium and indium oxide glasses?4 answersThe relationship between the refractive index and the band gap of doped praseodymium and indium oxide glasses is influenced by the dopant concentration and the glass composition. Studies on glasses doped with praseodymium show that as the dopant concentration increases, the optical band gap also increases, leading to changes in the refractive index. Additionally, the presence of Pr4+ ions in the glass network structure affects the density, glass transition temperature, and band gap energy, with these properties varying as rare earth elements are added from La to Nd to Pr. The optical band gap values can be used to estimate the non-linear refractive index of the glasses, indicating a correlation between the band structure and the refractive index in these materials.
How to improve the bandgap limitation of TiO2?5 answersTo improve the bandgap limitation of TiO2, several approaches have been explored. One approach is to add external impurities to TiO2, such as Sc and V, which reduces the band gap and allows for absorption of the visible spectrum. Another approach is to modify the TiO2 photoelectrode by using carbon quantum dots (CQDs) at different concentrations, which narrows the band gap and improves light absorption. Additionally, the use of reduced graphene oxide (rGO) in 1D photonic metasurfaces of TiO2 has been shown to broaden the absorption bandwidth in the near-infrared region. Surface morphology modification, band structure modification, and surface sensitization have also been explored to overcome the bandgap limitation of TiO2 nanotubes. Doping TiO2 with different atoms, such as silver (Ag), has been found to reduce the bandgap and enhance the photocatalytic activity.
Band gap of CdS nanoparticles ?3 answersThe band gap of CdS nanoparticles varies depending on the synthesis method and conditions. The band gap values reported in the abstracts range from 2.23 eV to 3.78 eV. CdS nanoparticles synthesized through dropwise precipitation have a band gap of 2.24 eV. Pristine CdS nanoparticles have a band gap of 2.48 eV. CdS nanoparticles capped with PVP polymer have a slightly lower band gap of 2.23 eV. CdS nanoparticles prepared by a chemical method exhibit a larger band gap of about 3.75 eV. The variation in band gap values can be attributed to factors such as particle size, crystal structure, and surface modifications.
What is the effect of band gap on the electronic properties of a material?3 answersThe band gap of a material has a significant effect on its electronic properties. The band gap determines whether a material is a conductor, semiconductor, or insulator. In materials with a small band gap, electrons can easily move between energy levels, resulting in high electrical conductivity. In contrast, materials with a large band gap have a limited number of available energy levels for electrons, leading to low electrical conductivity. The band gap also affects other properties such as optical properties, including absorption and reflectivity. For example, the inclusion of external stress can change the band structure and optical properties of a material, leading to a blue shift in absorption edges. Additionally, the band gap can be modulated by factors such as surface passivation and strain, which can alter the electronic structure and conductivity of the material.
What is the relationship between band gap and density of states?3 answersThe relationship between band gap and density of states (DOS) is explored in several papers. One paper constructs a mapping relationship between DOS and energy band gap using artificial intelligence machine learning algorithms. The results show that the random forest model is superior for predicting the band gap based on DOS. Another paper investigates the local density of optical states (LDOS) in finite-size photonic crystals. It finds that the LDOS decreases exponentially into the bulk of the crystal and is related to dipolar radiation and near-field effects. A theory for finite crystals shows that the density of states in a band gap scales with the linear size of the crystal. Additionally, a mathematical model is constructed for the temperature dependence of the density of surface states in silicon-based structures. Overall, these papers provide insights into the relationship between band gap and density of states in various materials and structures.
What is the band gap of SiO2?2 answersThe band gap of SiO2 is dependent on various factors such as sphere size, annealing temperature, and the presence of defects. Increasing sphere size leads to a red shift in the position of the [111] photonic band gap (PBG). Si/SiO2 quantum wells have been studied extensively for efficient light emission in silicon nanostructures. The band gap of these quantum wells has been measured using optical techniques, and strong confinement effects have been observed. Si3N2 has a predicted band gap of 1.05 eV and 1.19 eV at ambient pressure, as determined by first-principles calculations using density functional theory. Si nanocrystals embedded in SiO2 matrix have been studied, and the effective band gap has been calculated as a function of their diameter. The results show good agreement with experimental data.

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