How is the emission quantum efficiency of a semiconductor device determined using the relative method?
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The emission quantum efficiency of a semiconductor device is determined using a relative method by calculating the intensity of the laser beam emitted from the device and the intensity passing through the light-receiving section coupled with the device . This calculation is done using equipment such as a far field pattern measuring device or similar tools that can measure the characteristics of the semiconductor laser device with relative ease . The coupling efficiency is then determined by comparing these two intensities . This method allows for the determination of the coupling efficiency of a non-Gaussian profile semiconductor laser device and enables the coupling of the device with a light-receiving section in a high yield .
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| The provided paper does not mention the emission quantum efficiency of a semiconductor device or the relative method. |
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