T
Takao Yamada
Researcher at Nichia
Publications - 62
Citations - 9118
Takao Yamada is an academic researcher from Nichia. The author has contributed to research in topics: Laser & Diode. The author has an hindex of 31, co-authored 61 publications receiving 8952 citations.
Papers
More filters
Journal ArticleDOI
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
TL;DR: The luminous intensity of these green InGaN SQW LEDs (12 cd) was about 100 times higher than that of conventional green GaP LEDs (01 cd) as mentioned in this paper.
Journal ArticleDOI
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
Shuji Nakamura,Masayuki Senoh,Shinichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto,Tokuya Kozaki,Hitoshi Umemoto,Masahiko Sano,Kazuyuki Chocho +11 more
TL;DR: In this paper, a GaN multi-quantum well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN (ELOG) substrate was demonstrated to have a lifetime of more than 1150 h under room-temperature continuous-wave operation.
Journal ArticleDOI
Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
Shuji Nakamura,Masayuki Senoh,Shinichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Yasunobu Sugimoto,Hiroyuki Kiyoku +7 more
TL;DR: In this paper, a continuous-wave (cw) operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature (RT).
Journal ArticleDOI
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
Shuji Nakamura,Masayuki Senoh,Shinichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto,Tokuya Kozaki,Hitoshi Umemoto,Masahiko Sano,Kazuyuki Chocho +11 more
TL;DR: In this article, a GaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10000 h under continuous-wave operation at 20° C.