Is there paper that investigate the ferroelectricity of few nanometer scale HZO?
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Ferroelectric materials offer a low-energy, high-speed alternative to conventional logic and memory circuitry. Hafnia-based films have achieved single-digit nm ferroelectricity, enabling further device miniaturization . In this work, it demonstrates that a remanent polarization (Pr) value of >5 μC/cm2 can be obtained in as-deposited Hf0.5Zr0.5O2 (HZO) films that are fabricated by thermal atomic layer deposition (TALD) under low temperature of 250 ℃ . This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing .
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| Papers (5) | Insight |
|---|---|
| The provided paper does not investigate the ferroelectricity of few nanometer scale HZO. | |
| No, the provided paper does not investigate the ferroelectricity of few nanometer scale HZO. The paper focuses on the fabrication of Hf0.5Zr0.5O2 films by atomic layer deposition and their ferroelectric properties at a low temperature of 250 ℃. | |
| The provided paper does not investigate the ferroelectricity of few nanometer scale HZO. | |
| No, the provided paper does not investigate the ferroelectricity of few nanometer scale HZO. The paper is about the study of Ferroelectric HfO2-ZrO2 Superlattice Poly-Si Junctionless Nanosheet Gate-all-around Field-effect-transistor and CMOS Inverter. | |
| No, the paper does not investigate the ferroelectricity of few nanometer scale HZO. |
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