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Some papers on the Hall effect using current reversal? 


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Current-induced switching of the Hall effect has been explored in various research papers. For instance, the photonic spin Hall effect (PSHE) can be reversed by applying a small charge current, leading to low dissipation in the heterostructure . In twisted bilayer graphene (TBG), a dc electric current can flip the sign of the Hall resistance, indicating a switching of valley polarization and topology . Additionally, a theoretical model investigates the impact of Hall current on non-local semiconductors under high temperatures, showing the Hall effect induced by a collapsing magnetic field . Furthermore, a study reveals a time-reversal even linear charge Hall effect in chiral structures like twisted bilayer graphene, enabled by interfacial coupling and exhibiting giant Hall ratios under practical conditions . These papers collectively demonstrate the intriguing phenomena of current-induced Hall effect switching in various materials and structures.

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Time-reversal even linear charge Hall effect is explored in twisted interfaces, allowing Hall effect with current reversal. This concept is demonstrated in twisted bilayer graphene and transition metal dichalcogenides.
Real-time Hall-effect detection of current-induced magnetization dynamics in ferrimagnets explores transient Hall resistance during current-pulse injection, revealing distributed switching with activation delays.
Current-induced switching of the photonic spin Hall effect (PSHE) is demonstrated in the paper, showing reversible transverse beam shifts with charge current reversal, mediated by spin-orbit torques at the interface.
Not addressed in the paper.
"Current-induced reversal of Hall conductance observed in twisted bilayer graphene at $3/4$ filling, indicating switching of valley polarization and topology due to band redistribution and Coulomb interaction."

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What are the advantages and disadvantages of Hall-effect current sensors compared to other types of current sensors?4 answersHall-effect current sensors have several advantages compared to other types of current sensors. They offer a larger bandwidth and dynamic range, as well as reduced power consumption and dimension. Hall-based current sensors are also economically feasible, have high dynamic range, and can be integrated with standard CMOS technologies. Additionally, Hall sensors are widely used due to their compatibility with the standard CMOS process. However, one of the disadvantages of CMOS-based Hall sensors is their relatively low sensitivity, which is due to the low Hall coefficient of Si. To improve sensitivity, Hall sensors are biased at higher current levels, which limits their use in low-power bioelectronics and other power-constrained applications. Another challenge is implementing high-sensitivity vertical Hall elements in planar CMOS processes for 3D sensing, which often requires the use of expensive ferromagnetic materials.
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