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Sputtering Al은 비정질이야 polycrystalline이야 ? 


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Aluminum nitride (AlN) films can have both amorphous and polycrystalline phases . The study by Bakri et al. found that polycrystalline AlN films with a hexagonal wurtzite structure can be obtained through sputtering . Similarly, Zhou et al. synthesized polycrystalline γ-Al2O3 films using twin targets reactive high power impulse magnetron sputtering (TTR-HiPIMS) . Bolzan et al. also observed that In(y)Al(x)Sb(1-x-y) films deposited at 420 °C are polycrystalline with a zincblende phase . On the other hand, Ji et al. investigated the deposition of Al-Cu-Fe quasi-crystalline coatings and did not specifically mention the crystallinity of the films . Therefore, based on the available information, it can be concluded that AlN, γ-Al2O3, and In(y)Al(x)Sb(1-x-y) films mentioned in the abstracts are polycrystalline, while the crystallinity of Al-Cu-Fe coatings is not specified.

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The paper states that the films deposited by magnetron sputtering are polycrystalline, but it does not specifically mention whether the films with Al are polycrystalline or amorphous.
The paper states that the as-deposited films were polycrystalline γ-Al2O3, indicating that the sputtered alumina films are polycrystalline.
The paper states that aluminium nitride films grown by reactive ion plasma sputtering contain both amorphous and polycrystalline phases. Therefore, sputtering Al can result in both amorphous and polycrystalline films.
The paper mentions that the AlN thin films deposited by RF sputtering are polycrystalline in nature.

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