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What are the key differences between semiconductor substrate processing methods described in patent US11823953B2 and traditional methods? 


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The semiconductor substrate processing method described in patent US11823953B2 involves steps such as expanding a gas diffusion chamber, supplying gas, generating plasma, and stopping power supply . This method focuses on precise control and manipulation of gas and plasma to process substrates effectively. In contrast, traditional methods involve steps like forming peeling layers with laser irradiation, epitaxial growth, peeling off substrates, and grinding . Additionally, another traditional method includes exposing substrates to specific gas mixtures and generating RF plasma to deposit films with desired properties . The patent method emphasizes gas diffusion and plasma control, while traditional methods focus on laser processing, epitaxial growth, and film deposition using gas mixtures and plasma.

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The key difference lies in the use of a non-liquid treatment to enhance hydrophilicity before applying a treatment liquid, promoting liquid penetration between structures in the substrate, unlike traditional methods.
The method in US11823953B2 involves depositing a boron-carbon film using specific gas mixtures and RF plasma, enhancing properties for advanced semiconductor devices, unlike traditional methods.
The key difference lies in the use of a laser beam to form a peeling layer, enabling epitaxial growth of a second semiconductor substrate before grinding and removing the first substrate.
Patent
Moyama Kazuki, Nagaseki Kazuya 
26 Nov 2020
The key difference lies in the first expanding step, gas diffusion chamber manipulation, plasma generation, and power stopping in the patented substrate processing method compared to traditional methods.
The patent US11823953B2 introduces a method for semiconductor substrate processing involving substance concentration detection and supply solution dispensing, differing from traditional methods by its precision and feedback control.

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