What is the optimal thickness of Bi2Se3 for a Bi2Se3 device?
Best insight from top research papers
The optimal thickness of Bi2Se3 for a Bi2Se3 device depends on the specific application and desired performance. Several studies have investigated the effect of thickness on the properties of Bi2Se3 films. Fan et al. demonstrated that a thin Bi2Se3 flake with a thickness of 8-15 nm exhibited n-type behavior and could be used as an absorption layer in a photodetector . Liang et al. found that a Bi2Se3 film with a thickness of 15 nm showed the best performance as a self-powered light position-sensitive detector, with a high position sensitivity and fast response time . Antonova et al. studied Bi2Se3 films grown on printed graphene and found that films with a thickness of 20-30 nm had desirable properties for electronic and optical applications . Nasir et al. explored the growth of ultra-thin Bi2Se3 films with a thickness down to 4 nm and found that substrate pre-treatment was critical for obtaining completely coalesced films . Therefore, the optimal thickness of Bi2Se3 for a device depends on the specific application and can range from a few nanometers to tens of nanometers.
Answers from top 4 papers
More filters
| Papers (4) | Insight |
|---|---|
| The optimal thickness of Bi2Se3 for a Bi2Se3 device is not mentioned in the paper. | |
| The optimal thickness of Bi2Se3 for a Bi2Se3 device is not mentioned in the paper. | |
| The optimal thickness of Bi2Se3 for a Bi2Se3 device is 15 nm, as it shows the best performance with a position sensitivity of up to 89.7 mV/mm. | |
| The provided paper is about the thickness modulation of incline-grown Bi2O2Se, not Bi2Se3. The optimal thickness of Bi2Se3 for a Bi2Se3 device is not mentioned in the paper. |
Related Questions
How does the spin-orbit coupling affect the band gap of Bi2Te3?4 answersThe spin-orbit coupling (SOC) has a significant effect on the band gap of Bi2Te3. Without SOC, Bi2Te3 is calculated to be an insulator with a band gap of 0.5 eV. However, when SOC is included, the experimentally observed band gap is much narrower, measuring only 0.15 eV. This indicates that the effect of SOC is crucial in determining the narrow band gap of Bi2Te3.
What is the optimal wafer thickness for silicon back electrode solar cells?5 answersThe optimal wafer thickness for silicon back electrode solar cells depends on various factors. Different studies have suggested different optimal thickness ranges. One study found that for commercially-viable solar-grade silicon, thinner wafers in the range of 40-60 μm are required to significantly increase the practical efficiency limit of solar cells. Another study using multicrystalline silicon suggested that the optimal thickness depends on the relation of bulk recombination to surface recombination and light trapping, and can be calculated using the "Efficiency Limiting Bulk Recombination Analysis" (ELBA) method. Additionally, a study on hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction solar cells found that the implied open-circuit voltage (V OC) increases steadily with decreasing wafer thickness down to 30 μm, while the fill factor (FF) weakly depends on the thickness. Therefore, the optimal wafer thickness for silicon back electrode solar cells may vary depending on the specific technology and materials used.
How the thickness impact the conductivity of PEDOT-PSS films?5 answersThe thickness of PEDOT:PSS films has an impact on their conductivity. Thicker films tend to have higher conductivity. In one study, films with a thickness of 50-60 nm showed improved conductivity when processed with linear glycol-based additives such as ethylene glycol, diethylene glycol, and triethylene glycol. Another study compared the conductivity of films made using two different methods: deposition of single-walled carbon nanotubes (SWCNTs) and PEDOT:PSS in layers, and applying a film from their mixture. The films made using the layer deposition method had a much higher conductivity compared to the mixture method. Additionally, the power factor of composite films consisting of PEDOT:PSS and SWCNTs increased with increasing CNT content, resulting in higher conductivity. Overall, the thickness of PEDOT:PSS films can affect their conductivity, with thicker films generally exhibiting higher conductivity.
Why should Sb2Se3 PV cells be chosen over other thin film technologies?5 answersSb2Se3 PV cells should be chosen over other thin film technologies because of their potential for high photoelectric conversion efficiency (PCE) and their unique properties. Sb2Se3 thin films can be prepared with high crystal quality and improved carrier lifetime, leading to higher PCE values. Additionally, Sb2Se3 cells can be optimized through post-treatment methods, such as Sb2Se3 post-treatment, which can further enhance device efficiency by improving carrier transport, reducing trap-assisted recombination, and increasing carrier lifetimes. Furthermore, Sb2Se3 cells have shown promise in terms of their orientation control, benign grain boundaries, and defect passivation, which contribute to improved performance. Overall, Sb2Se3 PV cells offer the potential for high efficiency and can be optimized through various techniques, making them a favorable choice among thin film technologies.
What is the highest efficiency of Sb2Se3 PV material?5 answersThe highest efficiency of Sb2Se3 PV material reported in the abstracts is 30.9%. Other reported efficiencies include 19.60%, 16.62%, 8.42%, and 5.76%.
What is the crystalline structure of Sb2Se3?5 answersThe crystalline structure of Sb2Se3 is trigonal with a hexagonal unit cell. The crystal structure of Bi2Te2Se, which is similar to Sb2Se3, has been determined to have a trigonal unit cell with hexagonal cell edges. The crystal structure of Rb2Te3, another polytelluride compound, has been found to have a K2Te3-type structure with a space group of Pnma. Cs2Te3, another polytelluride compound, has a K2S3-type structure with a space group of Cmc21. However, the specific crystal structure of Sb2Se3 itself has not been mentioned in the provided abstracts.