When AZO etching, what is the best PR?
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The best photoresist (PR) for AZO etching is one that allows for superior etching selectivity, good control of critical dimensions (CD), and efficient removal of deposited polymer. A study on semiconductor fabrication techniques suggests that using a single PR with a masking protection step during the via etch process can improve post-etch profiles and CD control. Additionally, research on AlGaInP LEDs highlights the importance of textured AZO films in enhancing light extraction efficiency, achieved through wet-etching techniques. Furthermore, optimizing silver-embedded FTO films involves laser etching, Ag layer sputtering, and subsequent treatments to improve optical and electrical properties, indicating the significance of precise PR selection in film preparation.
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8 Citations | The best PR when AZO etching is to modify the surface roughness, enhancing light extraction efficiency of LEDs by creating random craters through wet-etching technique. |
13 Dec 2010 | The best PR for AZO etching is ArF PR due to its superior etching selectivity, via CD control, and clean efficiency achieved through a unique fluorocarbon polymer deposition technique. |
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